Electromagnetic Modeling and Simulation for Interconnect Structures Based on Volume-surface Integral Equations
Y. Q. Zhang,M. Wei,Yang Cao,Y. Q. Wang,Mei Song Tong
2013-01-01
Abstract:Electromagnetic (EM) analysis for interconnect and packaging structures usually relies on the solutions of surface integral equations (SIEs) in integral equation solvers. Though the SIEs are necessary for the conductors in the structures, one has to assume a homogeneity of material for each layer of substrate if SIEs are used for the substrate. When the inhomogeneity of materials in the substrate has to be taken into account, then volume integral equations (VIEs) are indispensable. In this work, we consider the inhomogeneous materials of substrate and replace the SIEs with the VIEs to form volume-surface integral equations (VSIEs) for the entire structures. The VSIEs are solved with the method of moments (MoM) by using the Rao-Wilton-Glisson (RWG) basis function to represent the surface current on the conductors and Schaubert-Wilton- Glisson (SWG) basis function to expand the volume current inside the substrate. A numerical example is presented to demonstrate the efiectiveness of the approach. Electromagnetic (EM) modeling and simulation are crucial for understanding the electrical per- formance of interconnect structures in microelectronic or nanoelectronic devices. The structures are usually small compared with the wavelength within a certain range of frequency, so extra care is required for achieving a good numerical accuracy (1). Also, the structures include multiscale features, namely, some dimensions are much smaller than others in geometries, leading to deteri- orating the conditioning of system matrix. Moreover, the EM analysis usually requires covering a wide range of frequency with signiflcant low-frequency components, resulting in a perplexity of low-frequency efiects (2). These factors have caused much challenge in numerical implementation and thus choosing appropriate governing equations, robust numerical method, and wise implemen- tation scheme has become essential. Traditionally, the EM modeling for interconnect structures is formulated with surface integral equations (SIEs) in integral equation approach (3) and one has to assume the homogeneity of materials in the dielectric substrate. However, the inhomogeneity of materials could exist due to their impurity in some interconnect structures and the SIEs may not be appropriate for such a case. In this work, we use the VIEs to replace the SIEs for the substrate and they are coupled with the SIEs for the conductors to form the volume-surface integral equations (VSIEs) for describing the EM features of the interconnect structures. The use of VIEs in the substrate allows the inhomogeneity of materials and may provide more ∞exibility in the analysis (4{7). The VSIEs are usually solved with the MoM in which the Rao-Wilton-Glisson (RWG) basis function is used to expand the surface current on the conductors with a triangular tessellation (8) while the Schaubert-Wilton-Glisson (SWG) basis function is applied to represent the ∞ux density in the substrate with a tetrahedral discretization (9). To facilitate the implementation, we suggest that the dyadic Green's function be kept in its original form without moving the gradient operator onto the basis and testing functions. We can avoid the inconvenience of conventional implementation in this way though requiring a good treatment for the hypersingularity in the dyadic Green's function (10). Numerical example for analyzing a typical inhomogeneous interconnect structure is presented to illustrate the approach and good result can be observed. 2. VOLUME-SURFACE INTEGRAL EQUATIONS