A High Power Diode-Side-Pumped Nd:Yag/Bawo4 Raman Laser at 1103 Nm

Lei Li,Xingyu Zhang,Zhaojun Liu,Qingpu Wang,Zhenhua Cong,Yuangeng Zhang,Weitao Wang,Zhenguo Wu,Huaijin Zhang

DOI: https://doi.org/10.1088/1054-660x/23/4/045402

IF: 1.2

2013-01-01

Laser Physics

Abstract:Pulsed operation at 1103 nm of a diode-side-pumped Nd:YAG laser with intracavity Raman shifting in BaWO4 is reported. The first Stokes wavelength at 1103 nm was generated by a Raman shift of 332 cm(-1) from the fundamental wave (1064 nm). A maximum power at 1103 nm of 9.4 W was obtained for a diode pump power of 115 W at a pulse repetition rate of 15 kHz. The pump-to-Stokes conversion efficiency was up to 8.2%. When the output power at 1103 nm was over 7 W, a second Stokes line at 1145 nm was also observed in the experiment. Our research indicates that efficient Raman conversion can be realized by a Raman frequency shift at 332 cm(-1) in BaWO4 Raman lasers.