Fabrication and Raman spectra of bilayer graphene

S. S. Lin

DOI: https://doi.org/10.1364/aoee.2013.asa3a.51

2013-01-01

Abstract:Single crystal bilayer graphene (BLG) and large area (larger than 8cmkh{cyrillic}5cm) have been fabricated by microcleavage and chemical vapor deposition method, respectively. Raman spectra of the BLG have been systematically investigated. © OSA 2013.

What problem does this paper attempt to address?

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Zhiqiang Luo,Ting Yu,Jingzhi Shang,Yingying Wang,Sanhua Lim,Lei Liu,Gagik G. Gurzadyan,Zexiang Shen,Jianyi Lin

DOI: https://doi.org/10.48550/arXiv.1012.0701

2010-12-03

Abstract:Large scale synthesis of single layer graphene (SLG) by chemical vapor deposition (CVD) has received a lot of attention recently. However, CVD synthesis of AB stacked bi-layer graphene (BLG) is still a challenging work. Here we report synthesis of BLG homogeneously in large area by thermal CVD. The 2D Raman band of CVD BLG splits into four components, suggesting splitting of electronic bands due to strong interlayer coupling. The splitting of electronic bands in CVD BLG is further evidenced by the study of near infrared (NIR) absorption and carrier dynamics probed by transient absorption spectroscopy. Ultraviolet photoelectron spectroscopy invesigation also indiates CVD BLG possesses different electronic structures from those of CVD SLG. The growth mechanism of BLG is found to be related to catalystic activity of copper (Cu)surface, which is determined by purity of Cu foils employed in CVD process. Our work showsthat strongly coupled or even AB stacked BLG can be grown on Cu foils in large scale, which isof particular importance for device applications based on their split electronic bands

Materials Science
High mobility dry-transferred CVD bilayer graphene

Michael Schmitz,Stephan Engels,Luca Banszerus,Kenji Watanabe,Takashi Taniguchi,Christoph Stampfer,Bernd Beschoten

DOI: https://doi.org/10.1063/1.4990390

2018-05-08

Abstract:We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices we extract charge carrier mobilities up to 180,000 cm$^2$/(Vs) at 2 K and up to 40,000 cm$^2$/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ration of more than 10,000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.

Mesoscale and Nanoscale Physics,Materials Science
Unintentional Doping Induced Splitting of G Peak in Bilayer Graphene

S. S. Lin,B. G. Chen,C. T. Pan,S. Hu,P. Tian,L. M. Tong

DOI: https://doi.org/10.1063/1.3666821

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Raman characterizations show the G peak of an unintentional doped single crystal bilayer graphene (BLG) splits into two peaks: S and AS peaks. From the relative shift between S and AS peaks, the doping concentration is estimated to be from 8.8 × 1012 cm−2 to 2 × 1013 cm−2, as in the same order of that in monolayer graphene prepared under the same condition. The dopants distribute relatively homogeneously in a 0.7 mm× 0.3 mm large BLG judged through the G peak splitting. The 2D peak of heavy doped BLG can only be deconvoluted into three peaks, corresponding to 2D1B, 2D1A, and 2D2A peaks.
Fast synthesis of large-area bilayer graphene film on Cu

Jincan Zhang,Xiaoting Liu,Mengqi Zhang,Rui Zhang,Huy Q. Ta,Jianbo Sun,Wendong Wang,Wenqing Zhu,Tiantian Fang,Kaicheng Jia,Xiucai Sun,Xintong Zhang,Yeshu Zhu,Jiaxin Shao,Yuchen Liu,Xin Gao,Qian Yang,Luzhao Sun,Qin Li,Fushun Liang,Heng Chen,Liming Zheng,Fuyi Wang,Wanjian Yin,Xiaoding Wei,Jianbo Yin,Thomas Gemming,Mark. H. Rummeli,Haihui Liu,Hailin Peng,Li Lin,Zhongfan Liu

DOI: https://doi.org/10.1038/s41467-023-38877-9

IF: 16.6

2023-06-03

Nature Communications

Abstract:Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO 2 during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.

multidisciplinary sciences
Raman Spectroscopy of Lithographically Patterned Graphene Nanoribbons

Sunmin Ryu,Janina Maultzsch,Melinda Y. Han,Philip Kim,Louis E. Brus

DOI: https://doi.org/10.1021/nn200799y

2012-01-20

Abstract:Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs) which are known to have nonzero electronic bandgap. GNRs of width ranging from 15 nm to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated graphene followed by oxygen plasma etching. Raman spectra of narrow GNRs can be characterized by upshifted G band and prominent disorder-related D band originating from scattering at ribbon edges. The D-to-G band intensity ratio generally increases with decreasing ribbon width. However, its decrease for width < 25 nm, partly attributed to amorphization at the edges, provides a valuable experimental estimate on D mode relaxation length of <5 nm. The upshift in the G band of the narrowest GNRs can be attributed to confinement effect or chemical doping by functional groups on the GNR edges. Notably, GNRs are much more susceptible to photothermal effects resulting in reversible hole doping caused by atmospheric oxygen than bulk graphene sheets. Finally we show that the 2D band is still a reliable marker in determining the number of layers of GNRs despite its significant broadening for very narrow GNRs.

Materials Science
Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Xiangping Chen,Xianqin Xing,Wenyu Liu,Zhanjie Lu,Hao Ying,Le Huang,Zhiyong Zhang,Shunqing Wu,Zhihai Cheng,Shanshan Chen

DOI: https://doi.org/10.48550/arXiv.2204.00194

2022-04-01

Abstract:In this work, a novel method to grow high-quality and large bilayer graphene (BLG) directly on various dielectric substrates was demonstrated. Large area single-crystal monolayer graphene was applied as a seeding layer to facilitate the homo-epitaxial synthesis of single crystal BLG directly on insulating substrates. The Cu nano-powders (Cu NP) with nanostructure and high surface-area were used as the remote catalysis to provide long-lasting catalytic activity during the graphene growth. The TEM results confirmed the single-crystalline nature of the BLG domains, which validates the superiority of the homo-epitaxial growth technique. The as-grown BLG show comparable quality with the CVD-grown BLG on metal surface. Field-effect transistors directly fabricated on the as-grown BLG/SiO$ _2 $/Si showed a room temperature carrier mobility as high as 2297 cm $ ^2 $ V$ ^{-1}$ s $^{-1} $.

Materials Science
Inherent Strains in Chemical-Vapor-deposited Bilayer Graphene on Cu

Jinglan Liu,Xuewei Zhang,Yang Zhang,Qiancheng Ren,Yanhan Jin,Pei Zhao

DOI: https://doi.org/10.1016/j.carbon.2021.07.074

IF: 10.9

2021-01-01

Carbon

Abstract:The electrical properties of bilayer graphene (BLG) are strongly affected by external forces. Here we use Raman spectroscopy to study the inherent strain states of BLG synthesized by chemical vapor deposition method on Cu, by manipulating 13C isotope atoms to substitute part of one layer in AB-stacked and twisted BLG to differentiate the Raman signals from the two layers. Results show that, both layers of twisted BLG are under compression but the compressive strain in the bottom layer is larger, which is caused by the mismatch of coefficients of thermal expansion between graphene and the substrate, whereas for AB-stacked BLG its top layer is under compression and the bottom layer is under tension due to the interlayer dislocations. These experimental data are further confirmed by molecular dynamics simulations. We believe that a clear understanding of the strain states of chemical-vapor-deposited BLG will provide the necessary route to optimize its future technologies especially in electronics.
Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Le Cai,Gui Yu

DOI: https://doi.org/10.1002/adma.202004974

IF: 29.4

2021-02-22

Advanced Materials

Abstract:Twisted bilayer graphene (tBLG) exhibits a host of innovative physical phenomena owing to the formation of moiré superlattice. Especially, the discovery of superconducting behavior has generated new interest in graphene. The growing studies of tBLG mainly focus on its physical properties, while the fabrication of high-quality tBLG is a prerequisite for achieving the desired properties due to the great dependence on the twist angle and the interfacial contact. Here, the cutting-edge preparation strategies and challenges of tBLG fabrication are reviewed. The advantages and disadvantages of chemical vapor deposition, epitaxial growth on silicon carbide, stacking monolayer graphene, and folding monolayer graphene methods for the fabrication of tBLG are analyzed in detail, providing a reference for further development of preparation methods. Moreover, the characterization methods of twist angle for the tBLG are presented. Then, the unique physicochemical properties and corresponding applications of tBLG, containing correlated insulating and superconducting states, ferromagnetic state, soliton, enhanced optical absorption, tunable bandgap, and lithium intercalation and diffusion, are described. Finally, the opportunities and challenges for fabricating high-quality and large-area tBLG are discussed, unique physical properties are displayed, and new applications inferred from its angle-dependent features are explored, thereby impelling the commercialization of tBLG from laboratory to market.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Synthesis and Intrinsic Magnetism of Bilayer Graphene Nanoribbons

Lin Fu,Kaiyu Zhang,Weili Zhang,Jie Chen,Yu Deng,Youwei Du,Nujiang Tang

DOI: https://doi.org/10.1016/j.carbon.2018.09.089

IF: 10.9

2019-01-01

Carbon

Abstract:Graphene nanoribbons (GNRs) can be an excellent spin semiconductor for the existence of both the localized edge states and intrinsic bandgap. Despite that the magnetism of single and multi-layer GNRs have been widely investigated before, the situation of bilayer GNRs (BLGNRs) is entirely unknown experimentally. Inspired by the potential applications in spintronics, here we report the synthesis of pristine BLGNRs with the average width of ca. 9 nm by longitudinal unzipping the oxalic acid-intercalated double-walled carbon nanotubes followed by annealing at 900 degrees C. The magnetic properties of BLGNRs were investigated. The results reveal that BLGNRs show obvious antiferromagnetic behavior with the Neel temperature of ca. 66 K. It is proposed that (i) the spin-polarized edge states are the dominant magnetic source, and (ii) the antiferromagnetism is mainly caused by the interlayer couplings. (C) 2018 Published by Elsevier Ltd.
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Seunghyun Lee,Kyunghoon Lee,Zhaohui Zhong

DOI: https://doi.org/10.1021/nl1029978

2010-11-18

Abstract:The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to um size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch x 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices.

Materials Science,Mesoscale and Nanoscale Physics
Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene

J. Velasco Jr,L. Jing,W. Bao,Y. Lee,P. Kratz,V. Aji,M. Bockrath,C. N. Lau,C. Varma,R. Stillwell,D. Smirnov,Fan Zhang,J. Jung,A. H. MacDonald

DOI: https://doi.org/10.1038/nnano.2011.251

2012-01-01

Abstract:The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field E\bot \sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG.
Building Large-Domain Twisted Bilayer Graphene With van Hove Singularity.

Zhenjun Tan,Jianbo Yin,Cheng Chen,Huan Wang,Li Lin,Luzhao Sun,Jinxiong Wu,Xiao Sun,Haifeng Yang,Yulin Chen,Hailin Peng,Zhongfan Liu

DOI: https://doi.org/10.1021/acsnano.6b02046

IF: 17.1

2016-01-01

ACS Nano

Abstract:Twisted bilayer graphene (tBLG) with van Hove Singularity (VHS) has exhibited novel twist-angle-dependent chemical and physical phenomena. However, scalable production of high-quality tBLG is still in its infancy, especially lacking the angle controlled preparation methods. Here we report a facile approach to prepare tBLG with large domain sizes (>100 μm) and controlled twist angles by a clean layer-by-layer transfer of two constituent graphene monolayers. The whole process without interfacial polymer contamination in two monolayers guarantees the interlayer interaction of the π-bond electrons, which gives rise to the existence of minigaps in electronic structures and the consequent formation of VHSs in density of state. Such perturbation on band structure was directly observed by angle-resolved photoemission spectroscopy with sub-micrometer spatial resolution (micro-ARPES). The VHSs lead to a strong light-matter interaction and thus introduce ~20 fold enhanced intensity of Raman G-band, which is a characteristic of high-quality tBLG. The as-prepared tBLG with strong light-matter interaction was further fabricated into high-performance photodetectors with selectively enhanced photocurrent generation (up to ~6 times compared with monolayer in our device).
Ultralow-frequency Raman System Down to 10 Cm(-1) with Longpass Edge Filters and Its Application to the Interface Coupling in T(2+2)lgs.

M. -L. Lin,F. -R. Ran,X. -F. Qiao,J. -B. Wu,W. Shi,Z. -H. Zhang,X. -Z. Xu,K. -H. Liu,H. Li,P. -H. Tan

DOI: https://doi.org/10.1063/1.4952384

2016-01-01

Abstract:Ultralow-frequency (ULF) Raman spectroscopy becomes increasingly important in the area of two-dimensional (2D) layered materials; however, such measurement usually requires expensive and nonstandard equipment. Here, the measurement of ULF Raman signal down to 10 cm(-1) has been realized with high throughput by combining a kind of longpass edge filters with a single monochromator, which are verified by the Raman spectrum of L-cystine using three laser excitations. Fine adjustment of the angle of incident laser beam from normal of the longpass edge filters and selection of polarization geometry are demonstrated how to probe ULF Raman signal with high signal-to-noise. Davydov splitting of the shear mode in twisted (2+2) layer graphenes (t(2+2)LG) has been observed by such system in both exfoliated and transferred samples. We provide a direct evidence of twist-angle dependent softening of the shear coupling in t(2+2)LG, while the layer-breathing coupling at twisted interfaces is found to be almost identical to that in bulk graphite. This suggests that the exfoliation and transferring techniques are enough good to make a good 2D heterostructures to demonstrate potential device application. This Raman system will be potentially applied to the research field of ULF Raman spectroscopy.
Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method

Yuan Hou,Xibiao Ren,Jingcun Fan,Guorui Wang,Zhaohe Dai,Chuanhong Jin,Wenxiang Wang,Yinbo Zhu,Shuai Zhang,Luqi Liu,Zhong Zhang

DOI: https://doi.org/10.1021/acsami.0c12000

2020-08-11

Abstract:Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (<i>h</i>-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging. Here, we propose a simple and handy method to prepare atomically clean twisted bilayer graphene with controllable twist angles based on wetting-induced delamination. This method can transfer tBLG onto a patterned substrate, which offers an excellent platform for the observation of physical phenomena such as relaxation of moiré pattern in marginally tBLG. These findings and insight should ultimately guide the designable packaging and atomic characterization of the two-dimensional (2D) materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c12000?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c12000</a>.Materials and methods; Figures S1–S11 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12000/suppl_file/am0c12000_si_001.pdf">PDF</a>)Movie S1 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12000/suppl_file/am0c12000_si_002.avi">AVI</a>)Movie S2 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12000/suppl_file/am0c12000_si_003.avi">AVI</a>)Movie S3 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12000/suppl_file/am0c12000_si_004.avi">AVI</a>)Movie S4 (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c12000/suppl_file/am0c12000_si_005.avi">AVI</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Interlayer Coulomb interaction in twisted bilayer graphene nanofragments characterized by the vibrational mode of G r + band

Yirui Lu,Lei Yan,Shafqat Hussain,Mengtao Sun,Zhenglong Zhang,Hairong Zheng

DOI: https://doi.org/10.1063/5.0082541

IF: 4

2022-02-21

Applied Physics Letters

Abstract:Tip enhanced Raman spectra of AB-stacked bilayer graphene (BLG) and twisted bilayer graphene (TwBLG) nanofragments have been studied by using density functional theory. Different from a normal Raman spectrum of BLG, a unique Raman band G r + is observed in its tip enhanced Raman spectrum and assigned as a split of the G band. We attribute this split to the nonuniformity distribution of the charge on carbon atoms. Compared with BLG, the G r + band intensity of TwBLG is dramatically enhanced at a small twist angle and decreases with the angle increasing. Interlayer Coulomb interaction represented in the G r + mode of TwBLG matches well with the atom vibration strength distribution of the G r + band at different twist angles, and thereby the properties of the G r + band can be tuned by the twisted angle. The results may help to further understand the Raman spectra of TwBLG and provide deep insights for exploring vibrational modes of two-dimensional nanomaterials.

physics, applied
High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Tsinghua University,Song Qiyang,Yi Xin,Chen Qiao,Wu Wenjia,Huang Meirong,Zhao Chuanwen,Shenzhen Huazhong University of Science and Technology Research Institute,Zhu Hongwei

DOI: https://doi.org/10.1007/s40843-020-1394-3

2020-01-01

Science China Materials

Abstract:Bilayer graphene (BLG) shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties. However, the scalable synthesis of large-area high-quality BLG films is still a great challenge, despite the maturity of chemical vapor deposition (CVD) technique. In this study, we report a robust method to grow BLGs on flat, softened Cu foils by atmospheric pressure CVD. A moderate amount of residual oxygen accelerates the growth of BLG domains while suppressing the formation of multilayers. Raising the nucleation density at low hydrogen pressure efficiently increases the film continuity. Based on the optimized CVD process, the growth of graphene films on 4×4 cm2 Cu foils with an average BLG coverage of 76% is achieved. The morphology and structure characterizations demonstrate a high quality of the BLG. Dual gate field-effect transistors are investigated based on AB-stacked BLG, with a tunable bandgap and high carrier mobility of up to 6790 cm2 V−1 s−1 at room temperature.
Oxygen-activated Growth and Bandgap Tunability of Large Single-Crystal Bilayer Graphene

Yufeng Hao,Lei Wang,Yuanyue Liu,Hua Chen,Xiaohan Wang,Cheng Tan,Shu Nie,Ji Won Suk,Tengfei Jiang,Tengfei Liang,Junfeng Xiao,Wenjing Ye,Cory R. Dean,Boris I. Yakobson,Kevin F. McCarty,Philip Kim,James Hone,Luigi Colombo,Rodney S. Ruoff

DOI: https://doi.org/10.1038/nnano.2015.322

2016-01-01

Abstract:Large, bilayer graphene single crystals can be grown by oxygen-activated chemical vapour deposition.
Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition

Yen-Chun Chen,Wei-Hsiang Lin,Wei-Shiuan Tseng,Chien-Chang Chen,George. R. Rossman,Chii-Dong Chen,Yu-Shu Wu,Nai-Chang Yeh

DOI: https://doi.org/10.1016/j.carbon.2019.09.052

2020-05-11

Abstract:Plasma enhanced chemical vapor deposition (PECVD) techniques have been shown to be an efficient method to achieve single-step synthesis of high-quality monolayer graphene (MLG) without the need of active heating. Here we report PECVD-growth of single-crystalline hexagonal bilayer graphene (BLG) flakes and mm-size BLG films with the interlayer twist angle controlled by the growth parameters. The twist angle has been determined by three experimental approaches, including direct measurement of the relative orientation of crystalline edges between two stacked monolayers by scanning electron microscopy, analysis of the twist angle-dependent Raman spectral characteristics, and measurement of the Moiré period with scanning tunneling microscopy. In mm-sized twisted BLG (tBLG) films, the average twist angle can be controlled from 0 to approximately 20 \degree, and the angular spread for a given growth condition can be limited to < 7 \degree. Different work functions between MLG and BLG have been verified by the Kelvin probe force microscopy and ultraviolet photoelectron spectroscopy. Electrical measurements of back-gated field-effect-transistor devices based on small-angle tBLG samples revealed high-quality electric characteristics at 300 K and insulating temperature dependence down to 100 K. This controlled PECVD-growth of tBLG thus provides an efficient approach to investigate the effect of varying Moiré potentials on tBLG.

Materials Science,Mesoscale and Nanoscale Physics
Enhancement of underlayer coverage in sub‐millimeter bilayer graphene by modifying the streamline direction

Yao Li,Qiming Sun,Zhendong Wang,Jianyu Wang,Meifeng Liu,Yunlong Xie,Xiuzhang Wang,Hong Li,Jun-Ming Liu,Di Wu,Li Wang

DOI: https://doi.org/10.1002/adem.202300793

IF: 3.6

2023-08-28

Advanced Engineering Materials

Abstract:The growth of large‐scale bilayer graphene (bi‐graphene) is significantly important for graphene‐based device fabrications. Chemical vapor deposition is usually used for the synthesis of high‐quality and large‐scale thin films including various monolayers and bilayers. However, a major challenge for bi‐graphene growth is the so‐called limited underlayer coverage, i.e., the faster growth of the top layer than the underlayer. Herein, using the circumfluence chemical vapor deposition, it is demonstrated that the underlayer growth can be greatly enhanced via optimizing the streamline, and high‐quality AB‐stacking sub‐millimeter bi‐graphene with underlayer coverage over 93 % is achieved successfully. Raman spectroscopy and selected area electron diffraction confirm the high crystalline quality and uniformity of the as‐grown bilayers. The as‐fabricated field effect transistor using the bi‐graphene as the channel layer exhibits typical semiconductor transfer characteristics and a nonzero bandgap which is required for device applications. It is suggested that the optimized streamline design largely allows a reduction of difference in the edge growth kinetics between the top and bottom layers. This work thus presents a promising technical route for the growth of large‐scale bi‐graphene with high underlayer coverage, beneficial for the development of functional graphene devices. This article is protected by copyright. All rights reserved.

materials science, multidisciplinary
Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond

S. Gupta,E. Heintzman,J. Jasinski

DOI: https://doi.org/10.1002/jrs.4609

IF: 2.727

2015-01-21

Journal of Raman Spectroscopy

Abstract:Strong in‐plane bonding (covalent) and weak van der Waals (vdW) interplanar interactions characterize a number of layered solids, as epitomized by graphite. The advent of graphene (Gr), individual atomic two‐dimensional (2D) layers, isolated from mineral graphite via micromechanical exfoliation enabled the ability to pick, place and stack of arbitrary compositions. Moreover, this discovery implicated an access to other 2D vdW solids beyond graphene and artificially stacking atomic layers forming heterostructures/superlattices. Raman spectroscopy (RS) is a fast reliable non‐destructive analytical tool and an integral part for lattice dynamical structural characterization of crystalline solids at nanoscale, revealing not only the collective atomic/molecular motions but also localized vibrations/modes and specifically used to determine the number of graphene layers and of other 2D vdW solids. We present Raman spectroscopy in first‐, second‐ and higher‐order vibrational modes involving 3 and 4 phonons (overtones and combination) and mapping of graphene (mono‐, bi‐, tri‐ and few‐) layers, semiconducting transition metal dichalcogenides (TMDs) [molybdenum disulfide (MoS2) and tungsten disulfide (WS2)] and wide bandgap hexagonal boron nitride (h‐BN) dispersed monolayers, revealing various molecular vibrations and structural quality/disorder. First‐ and higher‐order phonon modes are observed and analyzed in terms of Raman intensity (spatial inhomogeneity or thickness variation), band position (intrinsic mechanical strain) and intensity ratio (structural disorder) as a function of graphene layer (n). An empirical relation for G band position with n is corroborated. All of the higher order modes are observed to upshift almost linearly with n, betraying the underlying interlayer vdW interactions. These findings exemplify the evolution of structural parameters in layered materials in changing from 3‐ to 2‐ or low‐dimensional regime. The results are presented in view of applications of graphene by itself and in combination that help better understanding of physical and electronic properties for nano‐/optoelectronics. Copyright © 2015 John Wiley & Sons, Ltd. Multiphonon Raman spectroscopy properties of graphene (mono‐, bi‐, tri‐ and few‐) layers, and molybdenum disulfide (MoS2), tungsten disulfide (WS2) and hexagonal boron nitride (h‐BN) monolayers revealing various molecular vibrations and structural quality/disorder are reported. Raman spectroscopy and mapping served as a reliable non‐destructive analytical method for several twodimensional (2D) materials and determined an empirical relation between the G band position (∙G) and number of graphene layers (n).

spectroscopy

Fabrication and Raman spectra of bilayer graphene

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

High mobility dry-transferred CVD bilayer graphene

Unintentional Doping Induced Splitting of G Peak in Bilayer Graphene

Fast synthesis of large-area bilayer graphene film on Cu

Raman Spectroscopy of Lithographically Patterned Graphene Nanoribbons

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Inherent Strains in Chemical-Vapor-deposited Bilayer Graphene on Cu

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Synthesis and Intrinsic Magnetism of Bilayer Graphene Nanoribbons

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene

Building Large-Domain Twisted Bilayer Graphene With van Hove Singularity.

Ultralow-frequency Raman System Down to 10 Cm(-1) with Longpass Edge Filters and Its Application to the Interface Coupling in T(2+2)lgs.

Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method

Interlayer Coulomb interaction in twisted bilayer graphene nanofragments characterized by the vibrational mode of G r + band

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Oxygen-activated Growth and Bandgap Tunability of Large Single-Crystal Bilayer Graphene

Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition

Enhancement of underlayer coverage in sub‐millimeter bilayer graphene by modifying the streamline direction

Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond