A Study of Dislocation Climb Model Based on Coupling the Vacancy Diffusion Theory with 3d Discrete Dislocation Dynamics

Y. Gao,Z. Zhuang,X. C. You
DOI: https://doi.org/10.1615/intjmultcompeng.2012003177
2013-01-01
International Journal for Multiscale Computational Engineering
Abstract:Dislocation climb plays a vital role in the plastic behavior of crystals at high temperatures. In order to reveal the intrinsic mechanism of climb and its effect on plasticity, a new dislocation climb model has been developed based on diffusion theory of both bulk diffusion and pipe diffusion in a three-dimensional discrete dislocation dynamics (3D-DDD) simulation, which is considered to be more physical and widely applicable. Using our model, the shrinkage processes of a single prismatic loop and prismatic loop group were simulated. It is concluded that the climb rate is not directly determined by mechanical climb force as believed in classical theories, but by the gradient of the vacancy concentration around (bulk diffusion) and along (pipe diffusion) the dislocation line. The loop coarsening process was also simulated and the three pronounced evolving stages of the loop radii and the average vacancy concentrations in crystal were reproduced.
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