Abstract:ZnO/SIO, materials with different ZnO loadings were prepared by incipient wetness impregnation method in different calcination atmospheres. A home-built laser-induced luminescence spectroscopy setup was applied to studying the luminescent behavior of these materials. The continuous wave He-Cd laser (lambda= 325 nm) was used as the excitation source. It is found that the samples calcined in air mainly show the orange luminescence band (centered at about 670 nm), but the samples calcined in Ar mainly exhibit the green luminescence band(centered at about 540 nm). Interestingly, the orange luminescence band is changed into the green luminescence band after the ZnO/SiO2 was treated in air and calcined in Ar again, and the green luminescence band is changed into the orange luminescence band after the ZnO/SiO2 was treated in Ar and further calcined in air. These results suggest that the visible luminescence bands of ZnO are ascribed to the oxygen vacancies in ZnO. The green luminescence band is ascribed to the state with a high density of oxygen vacancies; and the orange luminescence band is attributed to the state with less oxygen vacancies. The XRD patterns show that ZnO in these materials exists as a wurtzite structure. UV-Vis and Raman spectra indicate that most ZnO is formed in the form of macrocrystal on SiO, Our results also demonstrate that the laser-induced luminescence spectroscopy is a powerful technique to characterize the defect sites, particularly the oxygen deficient in semiconductor materials.

Laser-Induced Fluorescence Spectroscopy of Nio Between 510 and 650 Nm

Laser-Induced Fluorescence Spectroscopy of Nis: Identification of A Low-Lying Electronic State

Laser-Induced Fluorescence Excitation Spectrum Of Nis In 15500-17200 Cm(-1)

Laser-Induced Fluorescence Spectroscopy of Nicl in 12900-15000 Cm(-1)

Laser-induced Fluorescence and Dispersed Fluorescence Spectroscopy of NiB: Identification of a New 2Π State in 19000–22100 Cm−1

Laser-induced Fluorescence Excitation Spectrum of NiS in 1550017200 cm<sup>1</sup>

Fluorescence Excitation Spectrum of a 2Π3/2–2Π3/2 Transition of NiF

Laser spectroscopy of NiI: Ground and low-lying electronic states

Spectroscopy of Nickel Monosulfide in 450–560nm by Laser-Induced Fluorescence and Dispersed Fluorescence Techniques

High-resolution laser-induced fluorescence spectrum of a jet-cooled NiI molecule has been recorded in the near infrared and visible regions. The NiI molecule was produced by reacting laser-ablated nickel atom and methyl iodide (CH3I). Three electronic states have been identified that include the

Laser-Induced Luminescence Spectroscopy of Zno/Sio2

Measurement of Nitric Oxide with Low Concentration Based on Mid-Infrared Laser Absorption Spectroscopy

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Atomic and Ionic Light Emission Spectra of Dipole Transition and Forbidden Transition Induced by the Impact of 126xe30+ on Ni Solid Surface

Observation and resonant x-ray optical interpretation of multi-atom resonant photoemission effects in O 1s emission from NiO

Reactions of Laser-Ablated Fe, Co, and Ni with NO: Infrared Spectra and Density Functional Calculations of MNO+ and M(NO)x (M = Fe, Co, X = 1−3; M = Ni, X = 1, 2), and M(NO)x- (M = Co, Ni; X = 1, 2)

A Time-Resolved Quadrupole Mass Spectrometric Study on 355 Nm Laser Ablated Species Ejected from LiMn 2 O 4

Spectroscopic Study of Laser-Induced Tunneling Ionization of Nitrogen Molecules

Infrared and visible laser spectroscopy for highly-charged Ni-like ions

Study for Photo-Induced Enhanced Raman Spectroscopy with Laser-Induced Periodic Surface Structures on Lithium Niobate on Insulator

Enhanced Photoluminescence of Nitrogen-Doped Zno Nanoparticles Fabricated by Nd:Yag Laser Ablation