Abstract:We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid–liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.

Theory of Controllable Shape of Quantum Structures Upon Droplet Epitaxy

Temperature-Dependent Preferential Formation Of Quantum Structures Upon The Droplet Epitaxy

Thermodynamic Theory Of Nucleation And Shape Transition Of Strained Quantum Dots

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Thermodynamic Theory Of Controlled Formation Of Strained Quantum Dots On Hole-Patterned Substrates

On the Physical Understanding of Quantum Rings Self-Assembly Upon Droplet Epitaxy

Growth Mechanisms of Quantum Ring Self-Assembly Upon Droplet Epitaxy

Formation Mechanisms of Multiple Concentric Nanoring Structures Upon Droplet Epitaxy

Thermodynamic Theory of Two-Dimensional to Three-Dimensional Growth Transition in Quantum Dots Self-Assembly

Control of complex quantum structures in droplet epitaxy

Elemental Diffusion During the Droplet Epitaxy Growth of In(Ga)As/GaAs(001) Quantum Dots by Metal-Organic Chemical Vapor Deposition

A Thermodynamic Theory of the Self-Assembly of Quantum Dots

Selective formation mechanisms of quantum dots on patterned substrates.

Origin of Nanohole Formation by Etching Based on Droplet Epitaxy

Origin of Quantum Ring Formation During Droplet Epitaxy

The Control on Size and Density of InAs QDs by Droplet Epitaxy (april 2009)

Thermodynamic Theory of Growth of Nanostructures

Growth mechanism of ring shaped nanostructures self-assembly upon droplet epitaxy

Thermodynamic Theory of Shape Evolution Induced by Si Capping in Ge Quantum Dot Self-Assembly

Anisotropic Lattice Boltzmann-phase-field Modeling of Crystal Growth with Melt Convection Induced by Solid-Liquid Density Change

Shape-dependent composition profile in epitaxial alloy quantum dots: A phase-field simulation