Abstract:Poor electrical conductivity, a crucial issue in applying manganese oxides as electronic materials, has been mentioned in nearly all related research work. A universal optimization scheme for intrinsic conductivity is lacking among solutions. In this study, boron with a strong Lewis acidity was selected as a doping source to modulate the electronic structure of manganese oxide. Boron, a commonly-used p-type doping element, has an unclear doping mechanism for transition metal oxides. Based on the first principles, all doping possibilities were investigated, finding boron atoms can most easily enter the lattice interstice. Importantly, after boron atom doping, the material generates a density of state at the Fermi level, resulting in the overlap of the valence and conduction band, forming a partial occupation band. The material changes from semiconductor properties to metallic properties and the electrical conductivity is significantly optimized. To verify the scheme feasibility, boron-doped Mn3O4 was synthesized through the hydrothermal and the charge transfer resistance of sample Mn-B-4 is 46 % lower than that of undoped Mn3O4 electrodes. Further exploration of boron doping effects was conducted by using supercapacitor tests which are strongly influenced by conductivity. Mn-B-4 exhibited better rate performance and cyclic stability as a supercapacitor electrode. The positive effects of boron doping on the electrical conductivity of manganese oxides were demonstrated through both theoretical calculations and experiments. This study will provide a general solution reference for large-scale modification and application of manganese oxide and would contribute to the promotion of the related electronic materials field.

Enhanced Oxide Ion Conductivity in Stabilized Cubic BaInO2.5 by Mn5+ Doping

ChemInform Abstract: Enhanced Oxide Ion Conductivity in Stabilized Cubic BaInO2.5 by Mn5+ Doping.

Improving Energy Storage Performance of Barium Titanate-Based Ceramics by Doping MnO2

Defect Dipoles Induced High‐energy Storage Density in Mn‐doped BST Ceramics Prepared by Spark Plasma Sintering

Mn-doping induced ferromagnetism and enhanced superconductivity in Bi_4-x Mn_x O_4 S_3 (0.075 < = x < = 0.15)

Mixed Doping and Nonstoichiometry Effect in Manganate

Optimising Ion Conductivity in NdBaInO4-Based Phases

Enhanced Bulk Conductivity of A-site Divalent Acceptor-Doped Non-Stoichiometric Sodium Bismuth Titanate

Synthesis, Structure and Conductivity of BaIn0.8Mn0.2O3−δ

Synthesis, crystal structure, and superconductivity of Ba(Bi0.25Pb0.75)1−Mg O3−

Suppression of electrical conductivity and switching of conduction mechanisms in ‘stoichiometric’ (Na0.5Bi0.5TiO3)1−x(BiAlO3)x (0 ≤ x ≤ 0.08) solid solutions

The Influence of Mn Doping on the Dielectric Properties of Ba0.5Sr0.5TiO3 Ceramics

Mn Dopant-Enabled BiFeO3 with Enhanced Magnetic and Photoelectric Properties

Boron Doping Induced Manganese Oxide Local Metallicity for Optimising Intrinsic Conductivity and Supercapacitor Performance

Ferroelectric and Ferromagnetic Properties of Mn-doped 0.7bifeo3–0.3batio3 Solid Solution

Improved thermal stability of [0 0 1]c poled 0.24Pb(In 1/2Nb1/2)O3-0.47Pb(Mg1/3Nb 2/3)O3-0.29PbTiO3 single crystal with manganese doping

Investigation of electrical conductivity and oxygen relaxation behavior for BaBi0.98Sr0.02Nb5-xTixO15-δ ceramics

Synthesis, crystal structure, and superconductivity of Ba(Bi0.25Pb0.75)1−xMgxO3−δ

Mn doping effects on electric properties of 0.93(Bi0.5Na0.5)TiO3‐0.07Ba(Ti0.945Zr0.055)O3 ceramics

Nanostructure La1-x Sr X MnO3 (x = 0.15 ∼ 0.5) with Improved Metal-Insulator Performance

Effects of Al-doping on the Stabilization of Monoclinic LiMnO2