Boosting the photocatalytic performance via defect-dependent interfacial interactions from electrostatic adsorption to chemical bridging
Youzi Zhang,Nanxi Miao,Xu Xin,Yijin Wang,Jinmeng Zhu,Peng Guo,Junjie Wang,Ana Jorge Sobrido,Maria-Magdalena Titirici,Xuanhua Li
DOI: https://doi.org/10.1016/j.nanoen.2022.107865
IF: 17.6
2022-12-15
Nano Energy
Abstract:The sluggish kinetics of interfacial electron transport and suboptimal photocatalytic stability are remaining challenges for designing efficient hetero-structured photocatalysts. Herein, we demonstrate a defect-induced interfacial interaction in the graphene oxide quantum dot/indium sulfide (GQD/In2S3) hybrid, achieving remarkable stability and efficiency. By introducing sulfur vacancies into the In2S3 structure, the interfacial electron exchange between the GQD and In2S3 drastically increases, turning the interfacial interaction from weakly electrostatic adsorption to strongly chemical bridging. The interfacial interaction transition exhibits a great advantage in kinetics of interfacial electron transport with 12.32 times increase in the internal electric field intensity and less than half of carrier transport activation energy, while preventing the sulfur leaching in In2S3 and enhancing the photocatalytic stability. Consequently, the GQD/In2S3 with chemical bridging interface exhibits a dominant photocatalytic activity, with 40.9 mmol g−1 h−1, 22.7 folds higher than the analogous materials without S vacancies, and 96.1% H2 yield retention after 100 h tests. The deep understanding of the defect-induced interfacial modulation provides an insight for the design of high-performance hybrid photocatalyst.
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology