Optoelectronic properties of CdSe0.75S0.25 nanocrystals assembled into micro-electrodes

Y. H. An,Yun Xing,J. Song,PeiGang Li,S. L. Wang,A. P. Liu,Z. Y. Zhu,Weihua Tang
DOI: https://doi.org/10.1166/jnn.2013.7518
2013-01-01
Journal of Nanoscience and Nanotechnology
Abstract:CdSe0.75S0.25 semiconductor nanocrystals were synthesized by chemical colloidal route. The crystal structure, morphology and optical properties of synthesized CdSe0.75S0.25 nanocrystals were characterized by XRD, TEM and UV-Vis absorption spectroscopy respectively. The crystal structure of CdSe0.75S0.25 is face-centered Cubic sphalerite phase. The average size is about 7 nm in diameter. A gold tip-to-tip structure electrode with the gap size similar to 20 mu m was fabricated using conventional optical lithography technique followed by film deposition and standard lift-off process. An optoelectronics device was fabricated based on CdSe0.75S0.25 by assembling nanocrystals into electrodes by using dielectrophoresis (DEP) process. The electrical transport properties and opto-electrical transport properties of the fabricated device were measured at temperature range from 5 K to 305 K. The results show that the resistance of CdSe0.75S0.25 NCs increases with the temperature decreases, indicating a typical semiconductor behavior. An obvious photoconductive behavior was observed, demonstrated potential application in nano-optoelectronics devices. After data analyzing, the conductivity shows the 0.5 exponent of Efros-Shklovskii variable-range-hopping (ES-VRH) model.
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