Resolution limits of electron-beam lithography toward the atomic scale

Vitor R. Manfrinato,Lihua Zhang,Dong Su,Huigao Duan,Richard G. Hobbs,Eric A. Stach,Karl K. Berggren

DOI: https://doi.org/10.1021/nl304715p

IF: 10.8

2013-01-01

Nano Letters

Abstract:We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.