Thermal transport in multilayers silicon carbide nanoribbons: A reverse non-equilibrium molecular dynamics
Fatima Zahra Zanane,Lalla Btissam Drissi,E. H. Saidi,M. Bousmina,O. Fassi Fehri
DOI: https://doi.org/10.1039/d3cp05459d
IF: 3.3
2024-01-13
Physical Chemistry Chemical Physics
Abstract:The heat conduction performance of the materials holds a crucial role in deciding their functional efficiency. For this purpose, the present study explores the structural and thermal properties in multilayer silicon carbide nanoribbons (SiCNRs). At first, we realize that the smallest values of cohesive energy correspond to the system with the largest interlayer distance due to VdW forces. The effects of ways of stacking layers, their number, edge chirality, ribbons width, temperature (T) as well as coupling strength between the layers on the thermal conductivity are all examined and discussed, using reverse nonequilibrium molecular dynamics method. It results an anisotropic trend of κ in terms of some parameters due to phonon scattering. By analyzing various phonon properties, including phonon density of states, phonon dispersion relations as well as phonon mean free path, critical insights into the mechanism of heat conduction in the systems are provided. System size results reveal that thermal conductivities follow an increasing behavior with length and a decreasing trend with width as well as temperature, which is attributed to the phonon-phonon scattering rate. Furthermore, the thermal conductivities drift from the normal 1/T law and shows an anomalous decreasing behavior above the room temperature. Overall, these results would offer a deep understating towards the thermal conductivity of n-SiCNRs and would promote their potential applications in thermoelectric and nanoelectronic devices.
chemistry, physical,physics, atomic, molecular & chemical