In Situ Investigation of the Microstructure of Kgd(Wo4)(2) Crystal Growth Boundary Layer by Confocal Laser Raman Microscopy

Deming Zhang,Di Wang,Ji Zhang,Qingli Zhang,Songming Wan,Dunlu Sun,Yulong Sun,Shaotang Yin
DOI: https://doi.org/10.1039/c2ce26369f
IF: 3.756
2012-01-01
CrystEngComm
Abstract:The microstructure of the solution near the crystal-solution interface is important for understanding the crystal growth mechanism. The microstructure of KGd(WO4)(2) crystal growth boundary layer was studied in situ by confocal laser Raman microscopy. The experimental results show that a free WO4 tetrahedron is the basic structural unit in KGd(WO4)(2)-K2W2O7 high temperature solution, and distorted WO6 octahedron, WOW and WOOW oxygen bridge bonds begin to appear and increase in concentration with the positions moving towards the crystal-solution interface. Meanwhile, a quasi-ordered boundary layer with the thickness of 50-70 mm was found near the interface. A growth mechanism of structural evolution was proposed in the boundary layer, where free WO4 tetrahedra are transformed into distorted WO6 octahedral long chain structures by forming the WOW and WOOW oxygen bridge bonds. According to the growth mechanism, the KGd(WO4)(2) crystal growth behaviour can be understood very well.
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