First-principles study on the lattice dynamics, electronic, mechanical, and thermoelectric properties of half-heusler compounds TiXSn (X = Ni, Pd, Pt)
Mingyao Xiong,Shumin Yang
DOI: https://doi.org/10.1016/j.mtcomm.2024.108051
IF: 3.8
2024-01-15
Materials Today Communications
Abstract:The rapid depletion of fossil fuels and their environmental impact can be mitigated through the exploration of efficient and sustainable materials capable of converting waste heat into electrical energy. Half-Heusler compounds are considered highly promising materials in the field of thermoelectric applications. In this study, utilizing semi-classical Boltzmann transport theory and deformation potential theory, we investigate the electronic structure, mechanical properties , and thermoelectric performance of TiXSn (X = Ni, Pd, Pt) compounds. Our results indicate that TiXSn (X = Ni, Pd, Pt) compounds are indirect bandgap semiconductors. All three compounds are ductile materials. p -type doping in TiXSn (X = Ni, Pd, Pt) compounds demonstrates better thermoelectric performance than n -type doping. At 300 K, the lattice thermal conductivity of TiPdSn is as low as 5.25 Wm −1 K −1 . Moreover, at 900 K, the maximum ZT values for p -type TiNiSn, TiPdSn, and TiPtSn are 0.56, 0.59, and 0.70, respectively, suggests that p -type TiXSn (X = Ni, Pd, Pt) compounds have promising thermoelectric applications.
materials science, multidisciplinary