Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

Zhefeng Li,Hongjie Zhang,Jiangbo Yu
DOI: https://doi.org/10.1016/j.tsf.2011.12.052
IF: 2.1
2012-01-01
Thin Solid Films
Abstract:We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP)3Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP)3TP2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP)3TP2 layer and electrons are easier to transport in Yb(PMBP)3Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP)3TP2/Yb(PMBP)3Bath, and pure Yb3+ ion characteristic emission centered at 980nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7mW/m2 at the applied voltage of 17.8V.
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