Enhanced Photoelectrochemical Performance of Ti-doped Hematite Thin Films Prepared by the Sol–gel Method

Xiaojuan Lian,Xin Yang,Shangjun Liu,Ying Xu,Chunping Jiang,Jinwei Chen,Ruilin Wang
DOI: https://doi.org/10.1016/j.apsusc.2011.10.001
IF: 6.7
2012-01-01
Applied Surface Science
Abstract:Ti-doped α-Fe2O3 thin films were successfully prepared on FTO substrates by the sol–gel route. Hematite film was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS). The XRD data showed α-Fe2O3 had a preferred (110) orientation which belonged to the rhombohedral system. Interestingly, the grains turned into worm-like shape after annealed at high temperature. The IPCE could reach 32.6% at 400nm without any additional potential vs. SCE. Titanium in the lattice can affect the photo electro chemical performance positively by increasing the conductivity of the thin film. So the excited electrons and holes could live longer, rather than recombining with each other rapidly as undoped hematite. And the efficient carrier density on the Ti-doped anode surface was higher than the undoped anode, which contribute to the well PEC performance.
What problem does this paper attempt to address?