Two-step etching pretreatment on WC-Co substrate for HFCVD deposition

刘海涛,向道辉,杨广斌,梁松,马德印
DOI: https://doi.org/10.13394/j.cnki.jgszz.2012.06.018
2012-01-01
Abstract:Two-step etching pretreatment method with ultrasonic vibration was applied to reduce the Co concentration on the surface of WC-Co substrate. A layer of smooth and homogeneous diamond film was deposited on the surface of WC-Co substrate by the bias-enhanced hot filament chemical vapor deposition (HFCVD) method. The two-step etching pretreatment method with ultrasonic vibration could effectively remove Co and obviously generate coarsening on the surface of WC-Co. When using Murakami reagent to etch for 20 min, then usingV(H2SO4):V(H202)=3 :7 solution to remove cobalt for 30 s, the nucleation density of diamond film was high and the quality of crystallization was very good. The two-step etching pretreatment method with ultrasonic vibration can effectively inhibit the adverse effect of Co to diamond film, and plays an important role in increasing the adhesion strength between diamond film and substrate.
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