Core-shell TiN@SrTiO3 Structure for Grain Boundary Barrier Layer Capacitor

Yan Wang,Xihai Jin,Yangqiao Liu,Jing Sun,Lian Gao

DOI: https://doi.org/10.1016/j.matlet.2012.01.067

IF: 3

2012-01-01

Materials Letters

Abstract:A novel TiN@SrTiO3-based (TiN@STO-based) grain boundary barrier layer capacitor (GBBLC) was proposed to decrease dielectric loss (tgδ) of SrTiO3-based GBBLC at high frequency region through reducing the electrical resistivity of GBBLC by introducing conductive core. The TiN@STO composite was synthesized by utilizing the surface electrostatic interaction between TiN and STO. The TiN@STO-based GBBLC was prepared by spark plasma sintering at 1150°C under N2 atmosphere and annealed at 600°C in air to remove the carbon contamination and insulate grain boundary. XRD and SEM results prove TiN phase was intact reserved in the annealed TiN@STO-based GBBLC. Compared with SrTiO3 GBBLC, the tgδ of 1TiN@5STO GBBLC remarkably decreased by 83.7% and 66.7% with the high dielectric constant reserved at 5kHz and 10MHz, respectively. The electric-conductor@semi-conductor core-shell structured composite GBBLC proposed in the paper can be expected to develop other high frequency ceramic capacitor with low dielectric loss.