Abstract:Experiments on directional solidification were carried out to investigate how purification of metallurgical-grade silicon in cast furnaces is affected by changes in heat extraction from and heat supply to their melts. A reference condition analogous to that in the block-casting process was established using top/side heaters to supply heat and a water-cooled base to extract heat from the bottom of a graphite-clay crucible. This condition was modified by (a) changing the crucible bottom material to graphite, (b) increasing the length of the resulting ingot from 100 to 130 mm, and (c) turning off the heaters. Temperatures were measured within the melt and in the furnace environment. The grain macro-microstructures and the macrosegregation of impurities of the ingots were revealed. The cooling rates and solid–liquid interface velocity calculated with a mathematical model increase relative to the reference experiment when the graphite crucible bottom is used or when the top/side heaters are absent. The vertical temperature gradients also increase with the graphite bottom, but significantly decrease without the heaters. Most of the ingots exhibit a purified lower region of columnar grains with straight boundaries, free from intermetallic particles, and an upper region with mixed long and short columnar grains with serrated boundaries, precipitated particles, and higher impurity concentrations. Changing the crucible bottom material from graphite-clay to graphite increases the length of the purified region from 70 (reference condition) to 97 mm, whereas turning off the heaters completely eliminates this region. Although the graphite crucible bottom (with the top/side heaters) yields the longest purified region, the graphite-clay bottom (also with the heaters) gives the lowest impurity concentrations.

Effects of Parameters on the Stability of Silicon Melt Pool in Cold Crucible Continuous Casting

Effects of Technical Parameters on Initial Silicon Melting in Round Cold Crucible Continuous Casting

Effect of Parameters on the Grain Growth of Silicon Ingots Prepared by Electromagnetic Cold Crucible Continuous Casting

Experimental Study on Hot Melt Splashes During Electromagnetic Continuous Casting Silicon

Experimental study on surface quality of silicon ingots prepared by electromagnetic continuous casting

Understanding the Effects of Heat Transfer on the Purification of Metallurgical Silicon by Directional Solidification in Cast Furnaces

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible

Parameter Study of Traveling Magnetic Field for Control of Melt Convection in Directional Solidification of Crystalline Silicon Ingots

Effects of process parameters on the quality and structure of casting titanium slab with uni-directional solidification in cold crucible

Experimental Study of the Silicon Start-Up Heating and Melting Process in an Inductive Cold Crucible

Effect of Power Parameter and Induction Coil on Magnetic Field in Cold Crucible During Continuous Melting and Directional Solidification

Temperature Field Calculation on Cold Crucible Continuous Melting and Directional Solidifying Ti50Al Alloys

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Application of Multi Heaters in a Directional Solidification Furnace for Silicon Solar Cells

Mass Transfer Behaviors of Oxygen During Cold Crucible Continuous Casting Silicon

Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

Optimization of Process Parameters for 40Cr Steel Continuous Casting Round Bloom with Pulsed Magneto‐Oscillation Treatment

Temperature field calculation on cold crucible continuous melting and directional solidifying Ti5OAl alloys

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Effects of silicon content and cooling rate on distribution and size of inclusion in silicon steel thin strip

Effects of Melt Depth on Oxygen Transport in Silicon Crystal Growth by Continuous-Feeding Czochralski Method