Transport properties, magnetoresistance, and temperature coefficient of resistance of perovskite NdMnO3
Haochen Wang,Gefei Lu,Kunpeng Su,Shuai Huang,Lin Yang,Weishi Tan,Haiou Wang
DOI: https://doi.org/10.1007/s10854-024-12879-9
2024-06-10
Journal of Materials Science Materials in Electronics
Abstract:Magnetoresistance and temperature coefficient of resistance (TCR) of manganites with ferromagnetism have been reported extensively, but the magnetoresistance and TCR of antiferromagnetic manganites are scarce. The transport properties, TCR, and magnetoresistance effect of antiferromagnetic NdMnO 3 have been studied in this work. NdMnO 3 samples exhibit semiconductor conductivity, and with the different applied magnetic fields, they still maintain semiconductor characteristics and have considerable stability. Under an applied magnetic field of 6 T, a small negative magnetoresistance of 8% appears near 150 K. Moreover, the conduction mechanism and TCR of NdMnO 3 are studied. Three models, thermal activation (TA) model, small polaron (SP) model, and variable range jump (VRH) model, are used to analyze the electrical transport of NdMnO 3 samples. The results show that the transport behavior of NdMnO 3 samples is more consistent with the TA model. The maximum TCR is 9.4% K −1 within the low temperature region (above liquid nitrogen temperature). The TCR decreases with increasing temperature and it remains 2.5% K −1 near room temperature. Antiferromagnetic NdMnO 3 has good TCR performance, which can be applied to temperature sensing field and has good application prospect in antiferromagnetic insulating electronic devices.
materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter