Insulation Characteristics of UHV GIS Under VFTO and Lightning Impulse

张璐,张乔根,刘石,殷禹,时卫东,陈维江
DOI: https://doi.org/10.3969/j.issn.1003-6520.2012.02.012
2012-01-01
Abstract:With increase of voltage level,difference between the rated lightning impulse(LI) and the very fast transient overvoltage(VFTO) level of gas insulated switchgear(GIS) decreases.Insulation failures caused by VFTO become severer.To clarify VFTO withstand level of 1 100 kV GIS,we designed a simulation system for generation of VFTO,and investigated the breakdown characteristics of sphere-plane and rod-plane gaps in SF6 under VFTO and LI for different gas pressures.Experimental results show that the breakdown voltages in slightly inhomogeneous field gaps under VFTO were higher than those under LI.However,for the rod-plane gaps,the breakdown voltages and voltage-time curves under VFTO were lower than those of LI at higher pressure in the case of negative polarity.The polarity effect of rod-plane gaps under LI was reversed at a certain pressure.Based on the analysis,it is concluded that the different breakdown characteristics of SF6 gaps may be attributed to the differences between space charge behaviors during discharge development under the impulse with different wave front and oscillation tail of VFTO and LI.
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