Sensitive SWIR Organic Photodetectors with Spectral Response Reaching 1.5 μm
Yi Zhang,Jingwen Chen,Jie Yang,Muyi Fu,Yunhao Cao,Minghao Dong,Jiangkai Yu,Sheng Dong,Xiye Yang,Lin Shao,Zhengwei Hu,Houji Cai,Chunchen Liu,Fei Huang
DOI: https://doi.org/10.1002/adma.202406950
IF: 29.4
2024-08-19
Advanced Materials
Abstract:A new non‐fullerene acceptor exhibiting an ultralow bandgap of 0.83 eV and strong absorption extending up to 1.5 μm is developed by rationally regulating its molecular packing order. The resulting photodetectors achieve an unprecedented detectivity over 1011 Jones from 0.4 to 1.5 μm with a maximum of 1.68 × 1012 Jones at 1.16 μm under 0 V bias. The performance of organic photodetectors (OPDs) sensitive to the short‐wavelength infrared (SWIR) light lags behind commercial indium gallium arsenide (InGaAs) photodetectors primarily due to the scarcity of organic semiconductors with efficient photoelectric responses exceeding 1.3 μm. Limited by the Energy‐gap law, ultralow‐bandgap organic semiconductors usually suffer from severe non‐radiative transitions, resulting in low external quantum efficiency (EQE). Herein, a difluoro‐substituted quinoid terminal group (QC‐2F) with exceptionally strong electron‐negativity is developed for constructing a new non‐fullerene acceptor (NFA), Y‐QC4F with an ultralow bandgap of 0.83 eV. This subtle structural modification significantly enhances intermolecular packing order and density, enabling an absorption onset up to 1.5 μm while suppressing non‐radiation recombination in Y‐QC4F films. SWIR OPDs based on Y‐QC4F achieve an impressive detectivity (D*) over 1011 Jones from 0.4 to 1.5 μm under 0 V bias, with a maximum of 1.68 × 1012 Jones at 1.16 μm. Furthermore, the resulting OPDs demonstrate competitive performance with commercial photodetectors for high‐quality SWIR imaging even under 1.4 μm irradiation.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology