Abstract:In the last few years the literature has witnessed a remarkable surge of interest for maps implemented by discrete-time (DT) memristor circuits. One main reason is that from numerical simulations it appears that even for simple memristor circuits the maps can easily display complex dynamics, including chaos and hyperchaos, which are of relevant interest for engineering applications. Goal of this manuscript is to investigate on the reasons underlying this type of complex behavior. To this end, the manuscript considers the map implemented by the simplest memristor circuit given by a capacitor and an ideal flux-controlled memristor or an inductor and an ideal charge-controlled memristor. In particular, the manuscript uses the DT flux-charge analysis method (FCAM) introduced in a recent paper to ensure that the first integrals and foliation in invariant manifolds of continuous-time (CT) memristor circuits are preserved exactly in the discretization for any step size. DT-FCAM yields a two-dimensional map in the voltage-current domain (VCD) and a manifold-dependent one-dimensional map in the flux-charge domain (FCD), i.e., a one-dimensional map on each invariant manifold. One main result is that, for suitable choices of the circuit parameters and memristor nonlinearities, both DT circuits can exactly embed two classic chaotic maps, i.e., the logistic map and the tent map. Moreover, due to the property of extreme multistability, the DT circuits can simultaneously embed in the manifolds all the dynamics displayed by varying one parameter in the logistic and tent map. The paper then considers a DT memristor Murali-Lakshmanan-Chua circuit and its dual. Via DT-FCAM these circuits implement a three-dimensional map in the VCD and a two-dimensional map on each invariant manifold in the FCD. It is shown that both circuits can simultaneously embed in the manifolds all the dynamics displayed by two other classic chaotic maps, i.e., the Hénon map and the Lozi map, when varying one parameter in such maps. In essence, these results provide an explanation of why it is not surprising to observe complex dynamics even in simple DT memristor circuits.

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