Structural Enhancement Mechanism of Field Emission from Multilayer Semiconductor Films

RZ Wang,XM Ding,B Wang,K Xue,JB Xu,H Yan,XY Hou
DOI: https://doi.org/10.1103/physrevb.72.125310
2005-01-01
Abstract:A self-consistent quantum model is developed to investigate the structural enhancement mechanism of field emission (FE) from multilayer semiconductor films. Compared with previous two-step FE mechanism, our self-consistent model is straightforward to understanding the whole tunneling process of the FE from multilayer semiconductor films. Calculated results show that FE characteristics can be remarkably improved only by structure modulation. The distinct structure effect of the FE characteristics mainly result from two reasons: one is the energy level shift and the other is effective surface barrier reduction due to accumulation of electrons in the occupied states. The present study offered new insights in structural effects for field emitters, which opened the possibility of carrying field emission research and application from an alternative approach.
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