Abstract:Generalized Reed-Solomon (RS) codes are a common choice for efficient, reliable error correction in memory and communications systems. These codes add $2t$ extra parity symbols to a block of memory, and can efficiently and reliably correct up to $t$ symbol errors in that block. Decoding is possible beyond this bound, but it is imperfectly reliable and often computationally expensive. Beyond-bound decoding is an important problem to solve for error-correcting Dynamic Random Access Memory (DRAM). These memories are often designed so that each access touches two extra memory devices, so that a failure in any one device can be corrected. But system architectures increasingly require DRAM to store metadata in addition to user data. When the metadata replaces parity data, a single-device failure is then beyond-bound. An error-correction system can either protect each access with a single RS code, or divide it into several segments protected with a shorter code, usually in an Interleaved Reed-Solomon (IRS) configuration. The full-block RS approach is more reliable, both at correcting errors and at preventing silent data corruption (SDC). The IRS option is faster, and is especially efficient at beyond-bound correction of single- or double-device failures. Here we describe a new family of "unraveling" Reed-Solomon codes that bridges the gap between these options. Our codes are full-block generalized RS codes, but they can also be decoded using an IRS decoder. As a result, they combine the speed and beyond-bound correction capabilities of interleaved codes with the robustness of full-block codes, including the ability of the latter to reliably correct failures across multiple devices. We show that unraveling codes are an especially good fit for high-reliability DRAM error correction.

Error Correction for Multi-Level NAND Flash Memory Using Reed-Solomon Codes.

Design of BCH Encoder/Decoder for NAND Flash Controller

Enhancing Data Storage Reliability and Error Correction in Multilevel NOR and NAND Flash Memories through Optimal Design of BCH Codes

A High-Speed Two-Cell BCH Decoder for Error Correcting in MLC NOR Flash Memories

Polar-Coded Forward Error Correction for MLC NAND Flash Memory Polar FEC for NAND Flash Memory

An Enhanced Decoder for Multiple-Bit Error Correcting BCH Codes

Bilayer LDPC Codes Combined with Perturbed Decoding for MLC NAND Flash Memory

An On-Chip High-Speed 4-Bit Bch Decoder In Mlc Nor Flash Memories

A Low Complexity LDPC-BCH Concatenated Decoder for NAND Flash Memory

Unraveling codes: fast, robust, beyond-bound error correction for DRAM

VLSI Implementation of BCH Codec for NAND Flash Controller

Novel Latin square matrix code of large burst error correction for MRAM applications

Unified architecture for Reed-Solomon decoder combined with burst-error correction

Enhanced Error Correction Against Multiple-Bit-Upset Based on Bch Code for Sram

Rate-Adaptive Protograph LDPC Codes for Multi-Level-Cell NAND Flash Memory.

Reducing Latency Overhead Caused by Using LDPC Codes in NAND Flash Memory.

An Area Efficient Design of BCH Decoder for Multi-Channel NAND Flash Memories

Embedded High-Speed Bch Decoder for New-Generation nor Flash Memories

A Joint-Ldpc Decoding Scheme Based on Retention Error Characteristics for MLC NAND Flash Memory.

Exploiting Asymmetric Errors for LDPC Decoding Optimization on 3D NAND Flash Memory

NRC: A Nibble Remapping Coding Strategy for NAND Flash Reliability Extension