Design of 24-Ghz High-Gain Receiver Front-End Utilizing ESD-Split Input Matching Network

Hongrui Wang,Lei Zhang,Li Zhang,Yan Wang,Zhiping Yu

DOI: https://doi.org/10.1109/tcsii.2011.2158723

2011-01-01

Abstract:This brief presents an electrostatic discharge (ESD)-protected receiver front-end for wireless communications around 24 GHz. A.-type input matching network incorporating two split ESD capacitances and an on-chip inductor is constructed to realize the source impedance transformation for high gain, good input matching, and only slightly degraded noise figure (NF). The measured results show that the front-end has an input return loss of less than -12 dB, a 36-dB voltage gain, a 6.8-dB NF, and a 2-dBm output CP1dB. The chip, fabricated in 0.13-mu mRFCMOS process, has a protection level equivalent to +/- 2-kV human body model ESD and consumes 40 mA from a 1.2-V supply with a total area of 1 x 0.8 mm(2).