Monte Carlo simulation of ion transport process in ECR microwave plasma with negative bias

Gong Ye,Liu Jinyuan,Song Yuanhong,Wen Xiaojun,Deng Xinlu,Ma Tengcai

DOI: https://doi.org/10.1016/S0042-207X(01)00442-0

IF: 4

2002-01-01

Vacuum

Abstract:In the presence of the external magnetic field, Monte Carlo method has been used to simulate a complete course, in which the ions pass through the neutral region, the sheath region and finally are absorbed by the workpiece surface with negative bias in Electron Cyclotron Resonance microwave plasma. The charge exchange and elastic scattering collisions between ions and neutrals are taken into account. The distributions of the ion energy and angle at the workpiece surface are obtained. It is found that under the same neutral gas pressure the lesser the distance from the target, the more the high-energy ions and smaller the scattering angle, and most of the ions are almost vertically incident on the target. As the neutral gas pressure increases, the number of high-energy ions at the target decreases and the number of low-energy ions increases. At the same time, numerical results show that with increasing magnetic mirror ratio, the number of high-energy ions striking the target increases and the scattering angle decreases obviously. The effect of secondary electrons on the sheath potential cannot be neglected.