Abstract:An unconventional phototransistor can be controlled by light, electric and magnetic fields, is proposed, fabricated, and demonstrated. This phototransistor uses a tandem structure composed of an organic solar cell, a resistive random access memory, and a micropyramid structured magnetoelectric film. This device possesses unique logical characteristics showing great potential for information security in the future development of Li‐Fi optical communication.Higher data transmission rates, broader bandwidths, better privacy, and security are indispensable for the current information‐explosive age. However, to achieve the desired functionalities still remains as a great challenge. In this study, a two‐terminal, vertical dual‐gate phototransistor, which can be controlled by light, electric and magnetic fields, is proposed, fabricated, and demonstrated. This phototransistor uses a tandem structure composed of an organic solar cell (OSC) of ITO/ZnO/P3HT:PC61BM/MoO3/Ag, a resistive random access memory (RRAM) of Ag/PMMA/Au and a magnetoelectric film with micropyramid structure of PDMS:FeNi/silver nanowires (AgNWs). This device integrates and couples the properties of each individual component enabling to respond to light, electric and magnetic fields and works as a dual‐gate transistor. Compared with conventional transistors, the proposed device carries several intriguing features, such as ultrafast photoresponse time of 3 µs, controllable photocurrent with a variety of external stimuli, high ON/OFF ratio greater than 103, and touchless human–machine interaction. All of the above features are beneficial for high‐speed optical communication and circuit miniaturization. Furthermore, its unique logical characteristics show great potential for information security in the future development of Li‐Fi optical communication.

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