Abstract:In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our fabrication methods in more detail which result in distinctly different device performances. In the first class of devices, Co/MgO electrodes are directly deposited onto graphene which results in rough MgO-to-Co interfaces and favor the formation of conducting pinholes throughout the MgO layer. We show that the contact resistance area product (R$_c$A) is a benchmark for spin transport properties as it scales with the measured spin lifetime in these devices indicating that contact-induced spin dephasing is the bottleneck for spin transport even in devices with large R$_c$A values. In a second class of devices, Co/MgO electrodes are first patterned onto a silicon substrate. Subsequently, a graphene-hBN heterostructure is directly transferred onto these prepatterned electrodes which provides improved interface properties. This is seen by a strong enhancement of both charge and spin transport properties yielding charge carrier mobilities exceeding 20000 cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discuss several shortcomings in the determination of both quantities which complicates the analysis of both extrinsic and intrinsic spin scattering mechanisms. Furthermore, we show that contacts can be the origin of a second charge neutrality point in gate dependent resistance measurements which is influenced by the quantum capacitance of the underlying graphene layer.

Manipulation Of Spin Transport In Graphene By Surface Chemical Doping

Spin-Dependent Transport Through A Quantum Wire on A Graphene Surface

Spin relaxation in single-layer graphene with tunable mobility.

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene

Unconventional Surface Doping Effect on the Spin State of an Adsorbed Magnetic Molecule

Graphene as a reversible spin manipulator of molecular magnets

Spin transport in multilayer graphene away from the charge neutrality point

Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts

Spin Transport in Graphite and Graphene Spin Valves

Tuning the Doping Type and Level of Graphene with Different Gold Configurations

Spin transport in high-mobility graphene on WS$_2$ substrate with electric-field tunable proximity spin-orbit interaction

Enhancement of Spin Injection into Graphene by Water Dipping

Effect of In-Situ Deposition of Mg Adatoms on Spin Relaxation in Graphene

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes

Manipulation of Molecular Spin State on Surfaces Studied by Scanning Tunneling Microscopy

Manipulating graphene mobility and charge neutral point with ligand-bound nanoparticles as charge reservoir.

Control of the local magnetic states in graphene with voltage and gating

Non-covalent control of spin-state in metal-organic complex by positioning on N-doped graphene

Edge states, spin transport and impurity induced local density of states in spin-orbit coupled graphene

Spin-Orbit Proximity Effect in Graphene