High-Efficiency Low-Voltage Stable Inverted Transparent Electrophosphorescent Organic Light-Emitting Diodes: Combining Electrically Doped Carrier Transport Layers and Iridium-Complex Doped Emissive Layer

X Zhou,J Blochwitz-Nimoth,M Pfeiffer,B Maennig,J Drechsel,A Werner,K Leo
DOI: https://doi.org/10.1016/s0379-6779(02)00935-9
IF: 4
2003-01-01
Synthetic Metals
Abstract:We demonstrated high-efficiency low-voltage stable inverted transparent electrophosphorescent organic light-emitting diodes employing an indium-tin-oxide coated glass substrate directly as cathode and a semitransparent top Au thin film as anode. The structure contains an iridium-complex doped emissive layer sandwiched in between n- and p-doped charge transport layer with appropriate blocking layers to form a nip structure. The devices are about 50% transparent and emit green light from both sides with peak external quantum efficiency (EQE) of 4.08% (14.3 cd/A). At 100 cd/m(2), the EQE is 3.8% (13 cd/A) at an operating voltage of 4.3 V. The devices exhibit a lifetime of above 50 hours under continuous constant-current driving for the initial luminance of about 9000 cd/m(2) in vacuum, which project a lifetime of 5000 hours for 100 cd/m(2).
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