Enhanced Luminescence Properties of Ba2MgSi2O7:Eu2+Prepared in Air Atmosphere

游潘丽 You Panli,刘丽娟 Liu Lijuan,姚亚东 Yao Yadong,黄忠兵 Huang Zhongbing,廖晓明 Liao Xiaoming,尹光福 Yin Guangfu
DOI: https://doi.org/10.3788/LOP47.121602
2010-01-01
Laser & Optoelectronics Progress
Abstract:A series of Eu-doped Ba2MgSi2O7 phosphors are prepared in air atmosphere by the high temperature solid-state reactions.A reduction of Eu3+ to Eu2+ ion is validated in Ba2MgSi2O7 via emission and excitation spectra measurement.The results show that the photoluminescence(PL) intensity of the Ba2MgSi2O7\:Eu2+ prepared in air at 1350 ℃ with quench cooling was enhanced about 6 times compared with that of Ba2MgSi2O7\:Eu2+ prepared in air at 1250 ℃ with furnace cooling.Moreover,the PL intensity of the Ba2MgSi2O7\:Eu2+ is increased by adding NH4F flux.The PL intensity of Ba2MgSi2O7\:Eu2+ phosphor containing 4% NH4F(molar fraction) is 5 times as high as that of the Ba2MgSi2O7\:Eu2+ phosphor without NH4F.
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