Abstract:Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed using thermionic emission theory to obtain the Schottky barrier heights and ideality factors between the silicide islands and the silicon substrates. Current-voltage measurements were performed ex situ for samples ("passivated surfaces") where the silicon surface surrounding the islands was passivated with a native oxide. Other samples ("clean surfaces") remained in UHV while I-V curves were recorded. By comparing barrier heights and ideality factors for islands on both surfaces, the effects of the non-passivated surfaces on conduction were studied. The clean surface barrier heights were found to be ~0.2 to 0.3 eV below barrier heights measured from similar islands on passivated surfaces. The reduced Schottky barrier is mainly attributed to Fermi level pinning by non-passivated surface states of the clean silicon surface. However, the measured barrier heights of the clean surface islands are equivalent on both Si(111) and Si(100), suggesting that the non-passivated surfaces are influenced by cobalt impurities. Furthermore, the barrier heights of islands on the clean surfaces are lower than due to Fermi level pinning alone and the additional barrier height lowering is primarily attributed to spreading resistance effects. Schottky barrier inhomogeneity may also cause additional barrier height lowering and non-ideality in the contacts. The clean surface barrier heights decreased and the ideality factors increased with decreasing temperature, which is attributed to the temperature variation of the Fermi level.

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Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

Double Threshold Behaviour of I-V Characteristics of Cosi2/Si Schottky Contacts

Fringing Field Effects in Semiconductor Nanowire Double Heterostructures

Schottky-Ohmic Transition in Metal-All-around Electrical Contacts to Silicon Nanowires

Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111)

Conducting Atomic Force Microscopy Studies of Nanoscale Cobalt Silicide Schottky Barriers on Si(111) and Si(100)

Schottky Barrier Characteristics of Polycrystalline and EpitaxialCoSi2/n-Si(111) Contacts Formed by Solid State Reaction

Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

Simulation Study of Schottky Contact Based Single Si Wire Solar Cell

Minority Carrier Conductive Channel Formed at a Direct Silicon-Bonded Interfacial Grain Boundary

Characterization of carrier transport properties in strained crystalline Si wall-like structures as a function of scaling into the quasi-quantum regime

Hole mobility increase in ultra-narrow Si channels under strong (110) surface confinement

First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer devices

Validation of minority carrier recombination lifetimes in low-dimensional semiconductors found by analytical photoresponses

Schottky Contact in Monolayer WS2 Field‐Effect Transistors

Variation of Schottky Barrier Height Induced by Dopant Segregation Monitored by Contact Resistivity Measurements

Contacts at the Nanoscale and for Nanomaterials

Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method