Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

Structures and Potential Superconductivity in SiH~4 at High Pressure: En Route to "metallic Hydrogen"

Velocity and Stability of Condensed Polymorphic SiH4: A High-Temperature High-Pressure Brillouin Investigation*

Layered Structures Favor Superconductivity in Compressed Solid SiH_4

High-pressure phases of silane

Hydrogen segregation and its roles in structural stability and metallization: silane under pressure

The metallization and superconductivity of dense hydrogen sulfide

Superconducting Behavior In Compressed Solid Sih4 With A Layered Structure

Structural evolution and molecular dissociation of H<sub>2</sub>S under high pressures

Pressure-induced Metallization of Silane

High Pressure Chemistry in the H 2 -Sih 4 System

A New Metastable Metallic Silicon Allotrope

Crystal Structure of SiH4 at High Pressure

Structural, Electronic, Dynamical, and Superconducting Properties in Dense Geh4(H-2)(2)

Structures and Superconductivity of Hydrogen and Hydrides under Extreme Pressure

High-pressure Structural Phase Transition and Metallization in Ga2S3 under Non-Hydrostatic and Hydrostatic Conditions Up to 36.4 GPa

Room-Temperature Structures of Solid Hydrogen at High Pressures

Synthesis and structure of carbon doped H3S compounds at high pressure

Ultrahigh-pressure Isostructural Electronic Transitions in Hydrogen

Pressure Induced Metallization of Light Group IV Hydrides

Superconducting High-Pressure Phase of Platinum Hydride from First Principles

Formation of transition metal hydrides at high pressures