Abstract:Semiconducting absorbers in high‐performance short‐wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single‐crystalline germanium and III–V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated Sex Te1‐x alloy thin films with tunable bandgaps for the fabrication of high‐performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Sex Te1‐x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Sex Te1‐x film‐based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al2O3 to enhance its absorption near the bandgap edge, the Se0.32Te0.68 film (an optical bandgap of ≈0.8 eV)‐based photoconductor exhibits a cut‐off wavelength at ≈1.7 µm and gives a responsivity of 1.5 AW−1 and implied detectivity of 6.5 × 1010 cm Hz1/2 W−1 at 1.55 µm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se0.32Te0.68‐based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems.

Photosensitive Post Tuning of Chalcogenide Te20As30Se50 Narrow Bandpass Filters

Chalcogenide Coatings of Ge_15Sb_20S_65 and Te_20As_30Se_50

Photosensitive Bandpass Filters

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Wavelength-tunable mid-infrared thermal emitters with a non-volatile phase changing material.

Chalcogenide Active Photonics

Broadband SnS/Te Photodetector to Long-Wavelength Infrared: Breaking the Spectrum Limit Through Alloy Engineering.

Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization

Photosensitive and thermal nonlinear effects in chalcogenide photonic crystal cavities

Tuneable Thermal Emission Using Chalcogenide Metasurface

Tunable Reflective Color Filters Based on Asymmetric Fabry-Perot Cavities Employing Ultrathin Ge2Sb2Te5 As a Broadband Absorber.

Evaporated Se x Te 1‐ x Thin Films with Tunable Bandgaps for Short‐Wave Infrared Photodetectors

Tunable mid-wave infrared Fabry-Perot bandpass filters using phase-change GeSbTe

Tuning of Classical Electromagnetically Induced Reflectance in Babinet Chalcogenide Metamaterials

Controlled Tuning of the Stop Band of Colloidal Photonic Crystals by Thermal Annealing

Bistable active spectral tuning of one-dimensional nanophotonic crystal by phase change

One-Dimensional Heterostructural Metallodielectric Photonic Band Gap Material For The Modification Of Emission Spectrum Of Baf2 Scintillator

A Wide-Range Photosensitive Weyl Semimetal Single Crystal-TaAs.

Tunable broadband near-infrared absorber based on ultrathin phase-change material

Improving Low-Temperature Performance Of Infrared Thin-Film Interference Filters Utilizing Temperature Dependence Of Refractive Index Of Pb1-Xgexte

Tunable 1D nano-photonic filter using Nematic liquid crystal and high-Tc superconductors