Abstract:In the GaAs/Inx(Al,Ga)1-xAs core/shell nanowire geometry, narrow cores exhibit significant bandgap reduction and enhanced electron mobility because of their ability to sustain extreme tensile elastic strain. In such an elastic state, the coherency limits and the resulting physical properties of the nanowires are governed by the strain field distribution and plastic relaxation mechanisms. Using atomic-resolution transmission electron microscopy, we determined the three-dimensional strain field, critical misfit, and plastic relaxation relative to the indium content of the shell, while maintaining constant core-shell dimensions. The strain was mapped experimentally in both coherent and plastically relaxed nanowires with a core radius of 10 nm and thick shells and was compared to atomistic and continuum calculations. Our findings reveal that, while axial strains remain uniform, elastic relaxation induces radial and tangential strain gradients. This is attributed to the strain concentration at the sharp interfaces, which persisted even after plastic relaxation. For the pertinent growth conditions, the maximum sustained elastic strain in the cores was observed for the GaAs/In0.5Al0.5As nanowires. The plastic relaxation of nanowires with shells of high indium content involved Frank partials delimiting horizontal intrinsic stacking faults, misfit dislocations gliding on inclined close-packed planes, and stair-rod dislocations along stacking fault junction lines attributed to nanowire bending. Ab initio calculations showed that the heterojunction remained type I even for the highest elastic strain, despite the existence of strain gradients at the core-shell interface. Our results elucidate the elastoplastic behaviour of core-shell nanowires with narrow cores, offering new perspectives on growth strategies to further push their coherency limits.

Strain Distributions in Lattice-Mismatched Semiconductor Core-Shell Nanowires

Simulation of inhomogeneous strain in Ge-Si core-shell nanowires

Strain in Semiconductor Core-Shell Nanowires

Analysis of strain energy in nanowire heterostructures with component gradient buffer section

Acoustic Phonons And Strain In Core/Shell Nanowires

Misfit Strain Relaxation Mechanisms in Core/Shell Nanowires

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires

Elastic limit and relaxation of GaAs/In(Al,Ga)As core/shell nanowires for near-infrared applications

In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires

An Analytical Model for the Critical Shell Thickness in Core/shell Nanowires Based on Crystallographic Slip

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires

Deformation of Copper Nanowire under Coupled Tension–Torsion Loading

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Surface Deformation-Dependent Mechanical Properties of Bending Nanowires: an Ab Initio Core-Shell Model

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Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures

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Analytical study of elastic relaxation and plastic deformation in nanostructures on lattice mismatched substrates

Atomistic Simulations of the Graded Residual Elastic Fields in Metallic Nanowires