Abstract:Conventional solid-state photodetectors, such as those made using silicon, are typically diode structures operated with a reverse bias placed across them. Low dark currents result; carriers photo-generated in the depletion region form a drift current which is the basis for light detection. Light with an energy greater than the band gap of the material can be seen. Silicon has a 1.1 eV band gap and devices fabricated from this material therefore react to both ultra-violet and visible wavelengths. The high resistivity of diamond suggests that diode structures may not be needed to achieve low dark currents if this material were used for the fabrication of photodetectors. Metal/diamond/metal devices can be considered which simply rely upon photoconductivity for their operation; such a device could possess high gain, since many carriers may be able to flow around the detector circuit during the lifetime of a photo-generated electron-hole pair. The wide band gap (5.5 eV, 225 run) of diamond implies that this form of photodetector will be capable of detecting deep UV light while being essentially “blind” to visible wavelengths. This property is highly desirable; filtering conventional devices to make them visible blind significantly reduces their sensitivity to UV light. The physical and chemical robustness of diamond also suggests that such devices may be suitable for operation in hostile environments. Diamond can exhibit high carrier mobilities, saturated carrier velocities and electric field breakdown strength; these properties suggest that fast detectors may be realisable. Many industrial, military and environmental applications can thus be envisaged for diamond UV sensors. The emergence of commercially accessible thin-film diamond grown by chemical vapour deposition (CVD) has enabled reliable devices to be developed. In this chapter, the intrinsic and extrinsic photoconductivity of thin-film diamond is reviewed; the design, fabrication and performance of diamond UV photodetectors is then discussed, along with some of the uses for these devices. For some applications, it may be desirable to fabricate diamond photodiodes; the realisation of this type of device from p-type material is also addressed.

The Fabrication and Performance of CVD Diamond-Based X-Ray Detectors

A polycrystalline diamond micro-detector for X-ray absorption fine-structure measurements

Device Performance of Chemical Vapor Deposition Monocrystal Diamond Radiation Detectors Correlated with the Bulk Diamond Properties

STUDY ON THE INFLUENCE OF SINGLE CRYSTAL DIAMOND MATERIALS ON DETECTOR FABRICATION AND PERFORMANCE

Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector

Infrared Optical Properties of Diamond Films and Electrical Properties of CVD Diamond Detectors

Study On Photodiodes Of Cvd Diamond Films

A single-crystalline diamond X-ray detector based on direct sp3-to-sp2 conversed graphene electrodes

A single-crystalline diamond X-ray detector based on direct sp<sup>3</sup>-to-sp<sup>2</sup> conversed graphene electrodes

High Performance Hydrogen/oxygen Terminated CVD Single Crystal Diamond Radiation Detector

Influence of the Diamond Grain Size on the Electrical Properties of Nano-Crystalline Diamond Film Detectors

Characteristics of CVD Diamond Film Detectors for Pulsed Radiation Detection

CVD Diamond for Ultraviolet and Particle Detectors

Improvement in the Sensitivity of the Response of Diamond Thin Films to X-Ray

CVD Diamond Film Detectors for Α Particles with a New Electrode Structure of Reduced Graphene Oxide/au

Recent Advances in Diamond Detectors

Fabrication Of Three Dimensional Diamond Ultraviolet Photodetector Through Down-Top Method

Development of the Charge Particle Detector Based on CVD - Diamond

Amorphous Selenium Based Photodetector Driven by Field Emission Current from N-doped Diamond Cold Cathode

Properties Of Cvd Diamond Film Detector

Fabrication of UV Photodetector on TiO2/Diamond Film