Effects of B2O3 Dopants on the Electrical Properties of Ta‐Doped SnO2 Varistors
Xiangning Yang,Hongfeng Zhao,Xudong Ji,Miao Kui
DOI: https://doi.org/10.1002/adem.202400195
IF: 3.6
2024-08-25
Advanced Engineering Materials
Abstract:This work finds that B2O3 dopant provides oxygen vacancies, increases the barrier height, and decreases the residual voltage ratio. Ta2O5 provides donor defects. When the optimum dopant concentrations of B2O3 and Ta2O5 are 0.1 and 0.05 mol%, respectively, the sample shows a leakage current of 0.25 μA cm−2, a residual voltage ratio of 1.95, and a nonlinearity factor of 25. As a new core component of surge arresters, it is crucial for manganese dioxide varistors to solve the challenges of reducing the leakage current and lowering the residual voltage ratio. In this study, the electrical characteristics of tin dioxide varistors using B2O3 as the acceptor dopant and Ta2O5 as the donor dopant are investigated. Several tin dioxide based varistors doped with different amounts of B2O3 are prepared and characterized by the researchers. X ray diffraction (XRD) is used to analyze the structural features of the samples and to observe the phases involved. It is found that the B2O3 dopant provides oxygen vacancies, reduces the grain size, increases the barrier height, and decreases the residual pressure ratio. The Ta2O5 dopant provides donor defects and free electrons needed to form the barrier. When balancing the concentrations of B2O3 and Ta2O5, the optimum dopant concentrations is found to be 0.1 mol% of B and 0.05 mol% of Ta; these concentrations result in a leakage current of 0.25 μA cm−2, a residual pressure ratio of 1.95, a nonlinear coefficient of 25, and a voltage gradient of 394 V mm−1 for the varistor.
materials science, multidisciplinary