Abstract:Some silicides and other intermetallic compounds can form protective layers of SiO2, Al2O3, etc., when exposed to oxidizing atmospheres at high temperatures. As a result they are interesting for use in structural parts subjected to such conditions, for example in aerospace technology. The present article is an attempt at modelling the thermodynamic and kinetic conditions that allow such protective layers to form. At the same time, one defines the limits (in fact low temperatures) beyond which the growth of such protective layers becomes impossible, often causing the onset of catastrophic failure referred to as the pest phenomenon. The thermodynamic parameters necessary for a quantitative evaluation of the oxidation process are relatively well known. That is not true of the kinetic factors which in the respective compounds have been determined but vaguely. Thus it is difficult to arrive at a true quantitative formulation of the results. Qualitatively, the situation is more satisfactory. For example, the occurrence of the pest phenomenon at low temperatures after an experimentally observed incubation time is quite in accordance with the mathematical relations derived here. Reference is made to similar work about the oxidation of silicides in the electronic industry where oxidation occurs in the presence of excess silicon, and therefore under quite different conditions than those that are at present considered.

Oxidation of Refractory Intermetallic Compounds: Kinetics and Thermodynamics