High-quality Single-Layer Graphene Via Reparative Reduction of Graphene Oxide

Boya Dai,Lei Fu,Lei Liao,Nan Liu,Kai Yan,Yongsheng Chen,Zhongfan Liu

DOI: https://doi.org/10.1007/s12274-011-0099-8

IF: 9.9

2011-01-01

Nano Research

Abstract:Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350–410 S/cm (whilst retaining >96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp 2 -C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.