Effect of temperature on the photoluminescence of Eu 3+ doped TiO 2-SiO 2 composite films

Jianguo Zhao,Ake Zhao,Erqing Xie,WeiYing Zhang,Zhaojun Liu
2011-01-01
Abstract:Eu 3+ ions doped TiO 2-SiO 2 composite thin films with different annealing temperature were fabricated by sol-gel method. The crystal structure and luminescence properties of the resulting nanofibers were separately investigated by X-ray diffraction(XRD), Raman, Fourier Transform Infrared Spectra (FTIR) and photoluminescence(PL)spectra. The intensity of visible emission due to Eu 3+ ions reaches maximum when annealing temperature is at 700°C. The intensity of the infrared emission at 820 nm due to the defect states associated with Ti 3+ ions increases with the annealing temperature increasing. On one hand, the number of Ti 3+ ions increases with the annealing temperature increasing, which causes the increase of defect levels; on the other hand, the energy back transfers from Eu 3+ ions to defect level associated with Ti 3+ ions. These two facts lead to the increase of the emission intensity at 820nm with the annealing temperature increasing.
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