Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Silicon Nitride Chemical Mechanical Polishing Mechanisms

XPS and AFM study of chemical mechanical polishing of silicon nitride

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Chemical mechanical polishing: Theory and experiment

Development of a novel chemical mechanical polishing slurry and its polishing mechanisms on a nickel alloy

Reactive Molecular Dynamics Simulation of Si Chemical Mechanical Polishing Process

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Mechanism and Applications of Chemical and Mechanical Polishing

Investigation on the Surface Characterization of Ga-faced GaN after Chemical-Mechanical Polishing

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Techniques

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

Molecular Modeling of the Mechanical Effect in the Chemical Mechanical Polishing Process

Investigation of the chemical action mechanism based on reactive force field in SiC chemical–mechanical polishing process

Effect of slurry composition on the chemical mechanical polishing of thin diamond films