Reliability and failure analysis of fine copper wire bonds encapsulated with commercial epoxy molding compound

Y.H. Tian,C.J. Hang,C.Q. Wang,G.Q. Ouyang,D.S. Yang,J.P. Zhao

DOI: https://doi.org/10.1016/j.microrel.2010.06.004

IF: 1.6

2011-01-01

Microelectronics Reliability

Abstract:The small outline transistor (SOT) devices which were interconnected with 20μm copper bonding wire and encapsulated with commercial epoxy molding compound (EMC) have been used in a series of reliability tests which including the thermal shock test, the electrical service life test, and the isothermal aging test. Isolated IMC spots were found at the bonding interface during the thermal shock test. No void or crack was observed even after 1500 cycles thermal shock test. No electrical failure was happened. The isolated IMC spots also occurred at the Cu/Al bonds interface after 500h electrical operation. After 1000h electrical operation, the sizes of the IMC spots were about 0.5μm. No layered IMC was observed. The IMCs were formed at the bonding interface when the aging temperature was between 150°C and 250°C. Micro cracks and Kirkendall voids were observed with the aging time of 9days at 200°C and the aging time of 9h at 250°C. The minor element in the EMC, Sb, has reacted with Cu wire and Cu bond surface at 250°C when the aging time was more than 16h. Cu3Sb was the main product of the diffusion reaction. With the aging time of more than 49h, the Cu wire was crashed into pieces and the Cu bond periphery has been severely corroded.