Abstract:The point defect of two-dimensional hexagonal boron nitride (hBN) has recently been discovered to achieve single photon emission at room temperature, and it has become a research hotspot. Despite its important fundamental and applied research significance, the origin of the atomic structure of luminescence defects in hBN is still controversial. In this paper, first-principle calculations based on density functional theory are used to study a defect (CN)3VB in the hexagonal boron nitride monolayer (hBN) where three N atoms near the B vacancy are replaced by C atoms. At the B vacancy of hBN, the three N atoms each carry an in-plane dangling bond and the corresponding unpaired electron, and the unpaired electron can be eliminated by C substitution. We systematically study the geometric structure, electronic structure and optical properties of (CN)3VB defects, analyze the thermodynamic stability of defects through the calculation of the atomic structure, formation energy, and charge state of the defect, and analyze the position in the band gap and its atomic orbital contribution of defect state through energy band structure and wave function. We also analyze its optical properties through dielectric function and absorption coefficient, and predict its luminous photon energy. The results show that the defect can change from a symmetric metastable state to an asymmetric ground state structure with three C atoms connected together through atomic structure relaxation. The formation energy of asymmetric (CN)3VB is 7.94 eV, which is 3.72 eV lower than that of symmetric one. The formation of defects introduces some local defect states contributed by defect dangling σ bonds and reconstructed π bonds in hBN. The defects have valence states between –2 and +2, and the thermodynamic transition energy level of asymmetric (CN)3VB is higher than that of symmetric (CN)3VB. In the transition from the metastable state to the ground state, these defect states can redshift the light absorption boundary of hBN, enhance the absorption intensity of visible light by hBN, and cause internal optical transitions. Among them, there is a visible light transition with an energy threshold around 2.58 eV in the asymmetry (CN)3VB defect. Single boron atom vacancy defect and (CN)3VB have optical transitions near infrared and ultraviolet energy, respectively. The present work will help to further understand the composition and optical properties of point defects in hBN, and provide a theoretical basis for experimentally exploring the origin and properties of the atomic structure of light-emitting point defects.

Experimental Observation of Defect-Induced Intrinsic Ferromagnetism in Iii-V Nitrides: the Case of Bn

First‐principles Study of the Electronic and Magnetic Properties of 4‐8 Line‐defect‐embedded BN Sheets Decorated with Transition Metals

Tunable Magnetic and Electronic Properties of BN Nanosheets with Triangular Defects: a First-Principles Study

Electronic and Magnetic Properties of Substituted BN Sheets: a Density Functional Theory Study.

Ab Initio Investigation about the Possibility of Ferromagnetism Induced by Boron Vacancy in BN Nanotubes

Electronic Structures of Defective Boron Nitride Nanotubes under Transverse Electric Fields

Spin-Resolved Visible Optical Spectra and Electronic Characteristics of Defect-Mediated Hexagonal Boron Nitride Monolayer

Hard Three-Dimensional BN Framework with One-Dimensional Metallicity

First-principles study of optical properties of monolayer h-BN and its defect structures under equibiaxial strain

First-principle Calculation Study of (CN)3VB Defect in Hexagonal Boron Nitride Monolayer

Induced ferromagnetism in bilayer hexagonal Boron Nitride (h-BN) on vacancy defects at B and N sites

Substitutional carbon doping of free-standing and Ru-supported BN sheets: A first-principles study.

Defect Engineering of Monoisotopic Hexagonal Boron Nitride Crystals via Neutron Transmutation Doping

First-Principles Study of Defected Single Layer Hexagonal Boron-Nitride (h-BN)

Electronic structures of defective BN nanotubes under transverse electric fields

Influence of point defects on the electronic properties of boron nitride nanosheets

Band-Gap Engineering Via Tailored Line Defects In Boron-Nitride Nanoribbons, Sheets, And Nanotubes

Irreparable Defects Produced By The Patching Of H-Bn Frontiers On Strongly Interacting Re(0001) And Their Electronic Properties

First-principles calculations of h-BN monolayers by doping with oxygen and sulfur

Identification and thermal stability of point defects in neutron-irradiated hexagonal boron nitride (h-BN)

Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN