Effect of Ce Doping and Oxygen Content on Pseudogap and Anisotropy in Nd2−xCexCuO4−δ

CH Wang,GY Wang,HB Song,Z Feng,SY Li,XH Chen
DOI: https://doi.org/10.1088/0953-2048/18/5/032
2005-01-01
Abstract:Transport properties of underdoped Nd2−xCexCuO4−δ single crystals with different oxygen contents have been investigated systematically. In-plane resistivity begins to decrease at a certain temperature T* (pseudogap opening); at the same temperature the out-of-plane resistivity shows a more apparent decrease, in contrast to the hole-doped cuprates. Around T*, the curvature changes the sign for both ρab(T) and ρc(T). Decrease of oxygen content results in a sign change of the curvature from negative to positive at high temperature for the crystals with x close to 0.15. T* decreases with increasing doping level and decreasing oxygen content, while the anisotropy increases, different from hole-doped cuprates. The pseudogap can only be observed in the underdoped regime for n-type cuprates; the change of oxygen content can just modify the pseudogap opening temperature.
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