Abstract:Recent atomic resolution scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e., nanoscale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-T-c superconductor Bi2Sr2CaCu2O8 + x. Based on the experimental findings, we conjectured that the inhomogeneity arises from variations in local oxygen doping level and may be generic of doped Mott insulators. In this paper, we provide theoretical support for this picture, We study a doped Mott insulator within a generalized t-J model, where doping is accompanied by ionic Coulomb potentials centered in the BiO plane located a distance d(s) away from the CuO2 plane. We solve, at the mean-field level, a set of spatially unrestricted Bogoliubov-de Gennes equations self-consistently to obtain the distributions of the hole concentration, the valence bond, and the pairing order parameters for different nominal/average doping concentrations. We calculate the LDOS spectrum, the integrated LDOS, and the local superconducting gap as those measured by STM, make detailed comparisons to experiments, and find remarkable agreement with the experimental data. We emphasize the unconventional screening of the ionic potential in a doped Mott insulator and show that nonlinear screening dominates on nanometer scales, comparable to the short coherence length of the superconductor. which is the origin of the electronic inhomogeneity. It leads to strong inhomogeneous redistribution of the local hole density and promotes the notion of local doping concentration (LDC). We find that the inhomogeneity structure manifests itself at all energy scales in the STM tunneling differential conductance. and elucidate the similarity and the differences between the data obtained in the constant tunneling current mode and the same data normalized to reflect constant tip-to-sample distance. We also discuss the underdoped case where nonlinear screening of the ionic potential turns the spatial electronic structure into a percolative mixture of patches with smaller pairing gaps embedded in a background with larger gaps to single particle excitations.

Self-localization of Holes in a Lightly Doped Mott Insulator

Self-localization of a Single Hole in Mott Antiferromagnets

Intrinsic Translational Symmetry Breaking in a Doped Mott Insulator

On the Possibility of Many-Body Localization in a Doped Mott Insulator

Holes As Dipoles In A Doped Antiferromagnet And Stripe Instabilities

Strong correlation induced charge localization in antiferromagnets

Nature of Strong Hole Pairing in Doped Mott Antiferromagnets.

Microscopic evolution of doped Mott insulators from polaronic metal to Fermi liquid

Non-Ioffe-Larkin composition rule and spinon-dictated electric transport in doped Mott insulators

Thermal Hall Effect and Neutral Spinons in a Doped Mott Insulator

Spin Hall Effect in a Doped Mott Insulator

Doped high-Tc cuprate superconductors elucidated in the light of zeros and poles of electronic Green's function

Mott insulators and the doping-induced Mott transition within DMFT: exact results for the one-band Hubbard model

Avoided metallicity in a hole-doped Mott insulator on a triangular lattice

Doping a Mott insulator in an Ising-Kondo lattice: Strange metal and Mott criticality

Local Density of States induced near Impurities in Mott Insulators

Composite Structure of Single-Particle Spectral Function in Lightly-Doped Mott Insulators

Inhomogeneousd-wave Superconducting State of a Doped Mott Insulator

The Wiedemann-Franz law in doped Mott insulators without quasiparticles

Hidden Spin Current in Doped Mott Antiferromagnets