Abstract:The present study investigates the phase formation of the titanium oxynitride (TiOxNy) system by employing the 'oxide‐to‐oxynitride' and 'nitride‐to‐oxynitride' synthesis strategies. The XRD patterns of both the materials showed peaks corresponding to Ti‐N and Ti‐O lattices, confirming the formation of Ti‐oxynitride system. Accordingly, the presence of Ti3+‐N3‐ and Ti4+‐2O2‐ signals is also confirmed by XPS analysis. The TiOxNy derived from oxide (TO‐TON) exhibits wide visible light absorption with a narrow band gap energy of ∽2.30 eV, while the nitride‐derived‐TiOxNy (TN‐TON) exhibits relatively a wide band gap energy (∽2.92 eV) along with the plasmonic band of TiN. In line with this, an enhanced recombination resistance and charge carriers with extended lifetime is observed for TN‐TON (4.47 ns) and TO‐TON (4.33 ns) systems via PL and TRPL analysis. Consequently, the TN‐TON system demonstrated a superior H2/NH3 production at a rate of ∽1432/646 μmol g‐1 h‐1 under solar irradiation, while it is ∽1136/553 μmol g‐1 h‐1 for the TO‐TON system. These efficiencies are ∽20x and 3x times higher than the bare TiN and TiO2, respectively towards H2/NH3 production. The insights from this study demonstrate that the nitride and oxide‐based precursors likely manifest synergistic and competitive properties, respectively, in the resulting oxynitride system. This article is protected by copyright. All rights reserved.

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