Abstract:Selective growth of GaN on maskless V-grooved sapphire substrate is found by metalorganic chemical vapor deposition (MOCVD), where the V-grooved sapphire substrate is fabricated by chemical wet etching. GaN layers grow only on the (0001) mesas and no GaN growth occurs on the {110k} sidewalls of the V-grooves. The origin of the selective growth of GaN is unveiled and analyzed by energy dispersive X-ray (EDX) spectroscopy mapping. It is found that, Ga migration rates on the different facets are different clearly at high temperatures (HTs) so that the selective growth occurs. Contrary to the situation of HTs, GaN nucleates uniformly on the mesas and sidewalls at low temperatures (LTs) without selectivity. Thus, it is concluded that the selective growth of GaN on sapphire facets is a kinetic limited process. Accordingly, it is possible to fabricate GaN-based nanostructures by controlling the growth conditions.

Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition