Theoretical study of secondary electron yield in energy range of 10~30 keV
Aigen Xie,Zusong Wang,Zhanhui Liu,Yu Zhan,Hongyan Wu
DOI: https://doi.org/10.3969/j.issn.1672-7126.2013.06.07
2013-01-01
Abstract:Here we addressed the theoretical subject of the secondary electron emission, in the energy range of 10~30 keV. First, the formulae of the maximum second electron yield (δm), and the average number of secondary electrons released per primary electron with fairly high incident energy (δPE) were derived, respectively. Next, a general expression of δ in terms of the variables, including δm, atomic number, atomic weight, material density, back-scattering coefficient (γ), back-scattering coefficient at high energy (η), parameter A, energy exponent (n), and the incident energy of primary electron, was obtained, on the basis of the influence of δm and δPE on the secondary electron yield at high energy (δ). The parameter A and energy exponent n, in the energy range of 10~30 keV for some emitters of interest, were modeled and calculated with the software package ESTAR. The experimentally measured and calculated results of δ with the general formula were compared. The comparison result shows that when it comes to the secondary electron emission in the energy range of 10~30 keV, the newly-developed general formula of δ works fairly well for metals, semi-metals and element semiconductors.