Abstract:The detailed understanding of the electronic properties of semiconducting materials requires the determination of their joint density of states (JDOS) and dielectric constant with high spatial resolution. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all electronic excitations with energies ranging between zero and about 100 eV. Therefore EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers–Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper calculation of the electronic properties of some widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), C60 fullerite crystal as well as synthetic and natural diamond, are presented. Extrapolation of a fit to the absorption data at the onset of an interband transition was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also discussed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors, having a bandgap of 2.63 and 1.59 eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss peak deconvolution. The processing of the data obtained from the ta-C material revealed another benefit of using EELS: the electrons of the beam can transfer momentum and energy to the electrons of the material, thus enabling the probing of indirect interband transitions. Use of this extra feature of EELS coupled with the extremely high spatial resolution obtainable in a scanning electron microscope has indicated that tetrahedral carbon thin films might not be amorphous after all, implying the need for a fresh look at their use as electronic materials.

Photoacoustic spectroscopy study on solid C60 in different crystalline states

Photoacoustic-Spectroscopy Measurement Of C60 Thin-Film

Electron Band-Structure Of C-60 Single-Crystal Using Synchrotron-Radiation

SR-arpes study on the valence band dispersions in single crystal C60

Sr-arpes study on the valence band dispersions in single crystal c_(60)

Synchrotron Radiation Photoemission Study Of Yb-Intercalated C-60

Synchrotron Radiation Photoemission Spectrum Study on K_3C_(60) Film

X-Ray Photoemission Studies of Yb Intercalated C-60 Thin Film

Synchrotron Radiation Angle-Resolved Photoemission Study of the Orientational Phase Transition for K3C60

Angle-resolved UPS studies on the cleaved (111) surface of C60 single crystals

Electronic structure and orientational phase transition of K3C60

Analysis of Carbon Materials with Infrared Photoacoustic Spectroscopy

Study of the Electronic Structure of Carbon Materials Near the Bandgap Using Electron Energy Loss Spectroscopy

Photoemission Study of Amorphous Carbon Modifications and Comparison with Calculated Densities of States

Electron-Microscopy Study of C60

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

High Resolution Photoelectron Spectroscopy of C60−

Ultrafast nonadiabatic electron dynamics in photoexcited C60: A comparative study among DFT exchange-correlation functionals

Theoretical Study on C60-doped Polyacenic Semiconductor (PAS) Through Phosphorylation

Photophysical properties of C60 colloids suspended in water with Triton X-100 surfactant: excited-state properties with femtosecond resolution

A Study of Waveguide Raman Scattering of C-60 Solid Film.