Quenching-enhanced shift of recombination zone in phosphorescent organic light-emitting diodes

G.Y. Zhong,Y.Q. Zhang,X.A. Cao
DOI: https://doi.org/10.1016/j.orgel.2010.05.010
IF: 3.868
2010-01-01
Organic Electronics
Abstract:We studied the influence of concentration quenching on exciton distribution and recombination in organic light-emitting diodes (OLEDs) with a neat fac-tris(2-phenylpyridinato-N, C2′) iridium (III) [Ir(ppy)3] emitting layer (EML). It has been found that electron overflow to the hole transport layer (HTL) at elevated currents was enhanced by quenching in the EML, leading to a broadened recombination zone. The maximum quenching of green phosphorescence occurred in OLEDs with 4nm Ir(ppy)3 and correlated well with the strongest blue fluorescence from the HTL. The OLEDs emitted white light with an efficiency of 6.5cd/A and a quantum efficiency twice as high as compared to similar OLEDs with an additional 4,4′,4″,-tris(N-carbazolyl) triphenylamine (TCTA) EBL.
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