Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
Li Zhai,Sara T. Gebre,Bo Chen,Dan Xu,Junze Chen,Zijian Li,Yawei Liu,Hua Yang,Chongyi Ling,Yiyao Ge,Wei Zhai,Changsheng Chen,Lu Ma,Qinghua Zhang,Xuefei Li,Yujie Yan,Xinyu Huang,Lujiang Li,Zhiqiang Guan,Chen-Lei Tao,Zhiqi Huang,Hongyi Wang,Jinze Liang,Ye Zhu,Chun-Sing Lee,Peng Wang,Chunfeng Zhang,Lin Gu,Yonghua Du,Tianquan Lian,Hua Zhang,Xue-Jun Wu
DOI: https://doi.org/10.1038/s41467-023-38237-7
IF: 17.694
2023-05-04
NanoScience and Technology
Abstract:Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.